UNISONIC TECHNOLOGIES CO., LTD
MMDT3904
NPN EPITAXIAL SILICON TRANSISTOR
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Copyright © 2021 Unisonic Technologies Co., Ltd QW-R218-013.D
DUAL NPN SMALL SIGNAL
SURFACE MOUNT TRANSISTOR
DESCRIPTION
The UTC MMDT3904 is a dual NPN small signal surface mount
transistor.
FEATURES
* Suitable for Low Power Amplification and Switching
* Epitaxial Planar Die Construction
* Extremely-Small Surface Mount Package
EQUIVALENT CIRCUIT
ORDERING INFORMATION
Ordering Number
Package
Pin Assignment
Packing
Lead Free Halogen Free 1 2 3 4 5 6
MMDT3904L-AL6-R MMDT3904G-AL6-R SOT-363 E1 B1 C2 E2 B2 C1 Tape Reel
MMDT3904L-AN6-R MMDT3904G-AN6-R SOT-563 E1 B1 C2 E2 B2 C1 Tape Reel
Note: Pin Assignment: E: Emitter B: Base C: Collector
(1) R: Tape Reel
(2) AL6: SOT-363, AN6: SOT-563
(3) G: Halogen Free and Lead Free, L: Lead Free
MMDT3904G-AL6-R
(1)Packing Type
(2)Package Type
(3)Green Package
MARKING
MMDT3904 NPN EPITAXIAL SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 2 of 3
www.unisonic.com.tw QW-R218-013.D
ABSOLUTE MAXIMUM RATINGS (T
A
=25°C, unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage V
CBO
60 V
Collector-Emitter Voltage V
CEO
40 V
Emitter-Base Voltage V
EBO
6.0 V
Collector Current - Continuous I
C
200 mA
Power Dissipation
SOT-363
P
D
200 mW
SOT-563 150 mW
Junction Temperature T
J
+150 °C
Storage Temperature T
STG
-55 ~ +150 °C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER SYMBOL RATINGS UNIT
Junction to Ambient
SOT-363
θ
JA
625 °C/W
SOT-563 833 °C/W
ELECTRICAL CHARACTERISTICS (T
A
=25°C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS (Note 1)
Collector-Base Breakdown Voltage V
(
BR
)
CBO
I
C
= 10μA, I
E
= 0 60 V
Collector-Emitter Breakdown Voltage V
(
BR
)
CEO
I
C
= 1.0mA, I
B
= 0 40 V
Emitter-Base Breakdown Voltage V
(
BR
)
EBO
I
E
= 10μA, I
C
= 0 6 V
Collector Cut-off Current I
CE
X
V
CE
= 30V, V
EB
(
OFF
)
= 3.0V 50 nA
Base Cut-off Current I
BL
V
CE
= 30V, V
EB
(
OFF
)
= 3.0V 50 nA
ON CHARACTERISTICS (Note 1)
DC Current Gain h
FE
I
C
= 100μA, V
CE
= 1.0V 40
I
C
= 1.0mA, V
CE
= 1.0V 70
I
C
= 10mA, V
CE
= 1.0V 100 300
I
C
= 50mA, V
CE
= 1.0V 60
I
C
= 100mA, V
CE
= 1.0V 30
Collector-Emitter Saturation Voltage V
CE(sat)
I
C
= 10mA, I
B
= 1.0mA 0.20 V
I
C
= 50mA, I
B
= 5.0mA 0.30 V
Base- Emitter Saturation Voltage V
BE(sat)
I
C
= 10mA, I
B
= 1.0mA 0.65 0.85 V
I
C
= 50mA, I
B
= 5.0mA 0.95 V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance C
OB
V
CB
= 5.0V, f = 1.0MHz, I
E
= 0 4.0 pF
Current Gain-Bandwidth Product f
T
V
CE
= 20V, I
C
= 10mA, f = 100MHz 300 MHz
Turn On Time t
ON
V
CC
=3V,V
BE
=0.5V,
I
C
=10mA,I
B1
=1mA
70 ns
Turn Off Time t
OFF
I
B
1=1
B
2=1mA 250 ns
Note: Pulse test: PW ≤ 300μs, Duty Cycle ≤ 2.0%.