UNISONIC TECHNOLOGIES CO., LTD
MMDT2227
DUAL TRANSISTOR
www.unisonic.com.tw 1 of 6
Copyright © 2021 Unisonic Technologies Co., Ltd QW-R218-019.F
NPN & PNP GENERAL
PURPOSE AMPLIFIER
DESCRIPTION
The UTC MMDT2227 is an NPN & PNP general purpose amplifier.
it’s suitable for a medium power amplifier and switch requiring
collector currents up to 600mA.
FEATURES
* Low V
CE(SAT)
, V
CE(SAT)
= 0.3V (typ.)@I
C
/ I
B
= 150mA / 15mA
V
CE(SAT)
< -0.4V (typ.) @I
C
/I
B
= -150mA / -15mA
* NPN MMBT2222A
PNP MMBT2907A
* High collector current gain under high collector current condition
EQUIVALENT CIRCUIT
ORDERING INFORMATION
Ordering Number
Package
Pin Assignment
Packing
Lead Free Halogen Free 1 2 3 4 5 6
MMDT2227L-AL6-R MMDT2227G-AL6-R SOT-363 E1 B1 C2 E2 B2 C1 Tape Reel
Note: Pin Assignment: E: Emitter B: Base C: Collector
MMDT2227G-AL6-R
(1)Packing Type
(2)Package Type
(1) R: Tape Reel
(2) AL6: SOT-363
(3) G: Halogen Free and Lead Free, L: Lead Free
(3)Green Package
MARKING
MMDT2227 DUAL TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 2 of 6
www.unisonic.com.tw QW-R218-019.F
ABSOLUTE MAXIMUM RATINGS (T
A
=25°C , unless otherwise specified)(Note 2)
PARAMETER SYMBOL RATINGS UNIT
Collector-Emitter Voltage
TR1
V
CEO
40
V
TR2 -60
Collector-Base Voltage
TR1
V
CBO
75
V
TR2 -60
Emitter-Base Voltage
TR1
V
EBO
6
V
TR2 -5.0
Collector Current - Continuous
TR1
I
C
600
mA
TR2 -600
Derate above 25°C P
D
200 mW
Junction Temperature T
J
+150 °C
Storage Temperature T
STG
-55 ~ +150 °C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. These ratings are limiting values above which the serviceability of any semiconductor device may be
impaired.
THERMAL DATA
PARAMETER SYMBOL RATINGS UNIT
Junction to Case θ
JC
415 °С/W
ELECTRICAL CHARACTERISTICS (T
A
=25°C unless otherwise specified)
TR1
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage V
(
BR
)
CEO
I
C
=10mA, I
B
=0 (Note) 40 V
Collector-Base Breakdown Voltage V
(
BR
)
CBO
I
C
=10 µA, I
E
=0 75 V
Emitter-Base Breakdown Voltage V
(
BR
)
EBO
I
E
=10µA, I
C
=0 6 V
Collector Cutoff Current I
CBO
V
CB
= 60V, I
E
=0 10 nA
Emitter Cutoff Current I
EBO
V
EB
=3.0V, I
C
=0 10 nA
ON CHARACTERISTICS
DC Current Gain h
FE
I
C
=0.1mA, V
CE
=10V 35
I
C
=1mA, V
CE
=10V 50
I
C
=10mA, V
CE
=10V 75
I
C
=150mA, V
CE
=10V 100 300
I
C
=150mA, V
CE
= 1V (Note) 50
I
C
=500mA, V
CE
=10V 40
Collector-Emitter Saturation Voltage (Note) V
CE(SAT)
I
C
=150mA, I
B
=15mA 0.3 V
I
C
=500mA, I
B
=50mA 1.0 V
Base-Emitter Saturation Voltage (Note) V
BE(SAT)
I
C
=150mA, I
B
=15mA 0.6 1.2 V
I
C
=500mA, I
B
=50mA 2.0 V
SMALL SIGNAL CHARACTERISTICS
Current Gain - Bandwidth Product f
T
I
C
= 20mA, V
CE
=20V, f =100MHz 300 MHz
Output Capacitance C
OB
V
CB
=10 V, I
E
=0, f=100 kHz 8 pF
Input Capacitance C
IB
V
EB
=0.5V, I
C
=0, f=100 kHz 25 pF
Noise Figure NF
I
C
=100µA, V
CE
=10V,
R
S
=1.0kΩ, f =1.0kHz
4 dB