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Page 1 of 16
DIC-034 R4
Diodes Incorporated Rel Date: 2/8/2019
www.diodes.com
DATE: May 5, 2020
PCN #: 2461 - Advance Notice
PCN Title: Phenitec Wafer Manufacturing Site Change, Additional Wafer
Sources, Wafer Diameter Change, Additional Assembly and Test Site
Dear Customer:
This is an advance announcement of change(s) to products that are currently
being offered by Diodes Incorporated.
We request that you acknowledge receipt of this notification within 30 days of the
date of this PCN. If you require samples for evaluation purposes, please make a
request within 30 days as well. Otherwise, samples may not be built prior to this
change. Please refer to the implementation date of this change as it is stated in
the attached PCN form. Please contact your local Diodes sales representative to
acknowledge receipt of this Advance PCN.
Previously agreed upon customer specific change process requirements or
device specific requirements will be addressed separately.
For questions or clarification regarding this PCN, please contact your local
Diodes sales representative.
Sincerely,
Diodes Incorporated PCN Team
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Page 2 of 16
DIC-034 R4
Diodes Incorporated Rel Date: 2/8/2019
www.diodes.com
ADVANCE NOTICE - PRODUCT CHANGE NOTICE
PCN-2461 REV 1
Notification Date: Implementation Date: Product Family: Change Type: PCN #:
May 5, 2020 Expected:
December 31, 2020
Discrete Wafer Site Transfer,
Additional Wafer Source,
Additional AT Site
2461
TITLE
Phenitec Wafer Manufacturing Site Change, Additional Wafer Sources, Wafer Diameter Change, Additional
Assembly and Test S i te
DESCRIPTION OF CHANGE
This advance PCN is being issu ed to notify customers that Diodes’ foundry Phenitec Semiconductor Corporation
will transfer wafer manufacturing from Headquarters ‘H Q Fab’ to ‘1
st
Fab’ and convert manufacturing for select
wafer types currently manufactured at ‘1
st
Fab’ from 5” to 6” wafer diameter. Both factories are located in Okayama,
Japan. Phenitec’s ‘1
st
Fab’ has been a qualified wafer supplier of Diodes for a number of years.
In conjunction with the Phenitec fab site transfer and change in wafer diameter, several additional changes will be
implemented on select part numbers to ensure continuity of supply, standardize manufacturing processes, and
enhance manufacturability. This includes the addition of wafer sources and an assembly & test site, and alignment
of wafer fab and assembly bill of materials (BOM), i.e. wafer process metal system, mold compound, bond wire
material. Details are outlined below.
Full electrical characterization and high reliability testing is ongoing on representative products to ensure there is no
change to device functionality or electrical specifications in the datasheet.
Phenitec 1
st
Fab samples and full qualification will not be immediately available. To minimize impact, Diodes will be
building buffer inventory before the site change. Please contact your local Diodes Sales representative for samples
availability.
Please note that dates mentioned above are best estimates derived from close coordination activities with our
foundry. Specific implementation dates may change depending on completion of various qualifications over the next
few months. The final PCN is expected to be issued by September 30
th
, 2020 once qualification has been
completed.
List of changes:
1) Manufacturing site transfer from Phenitec’s ‘HQ Fab’ to ‘1
st
Fab’
2) Change from 5” to 6” wafer diameter at Phenitec ‘1
st
Fab’
3) Add Phenitec ‘1
st
Fab’ as additional wafer sour ce
4) Add Diodes internal SFAB1 (Shanghai SIM-BCD Semiconductor Manufacturing Company, Ltd.), located
in Shanghai, China as additional wafe r source, or add an additional die type in SFAB1 **
5) Add Diodes internal OFAB (Diodes Zetex Semiconductors Limited) in Oldham, UK as additional wafer
source
6) Add LiteOn Semiconductor Corp. in HsinChu, Taiwan as additional wafer source
7) Change in die size *
8) Add Diodes internal CAT (Chengdu Assembly & Test) as additional A/T site using PdCu or bare Cu bond
wire
Affected parts lists and corresponding changes a re shown in the table s belo w.