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©2004 Semiconductor Components Industries, LLC.
November-2017, Rev. 2
Publication Order Number:
HGTP7N60A4/D
HGT1S7N60A4S9A, HGTG7N60A4
600V, SMPS Series N-Channel IGBT
The HGT1S7N6 0A4S9A , HGTG7N60A4 an d HGTP7N60A4
are MOS gated high voltage switching devices combining
the bes t featu res of MOSFETs and bipolar tr ansistors . These
devices have the high input impedance of a MOSFET and
the low on-state conduction loss of a bipolar transistor. The
much lower on-state voltage drop varies only moderately
between 25
o
C and 150
o
C.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power supplies.
Formerly Developmental Type TA49331.
Features
• >100kHz Operation at 390V, 7A
• 200kHz Operation at 390V, 5A
• 600V Switching SOA Capability
• Typical Fall Time
. . . . . . . . . . . . . . . . . . . 75 ns at T
J
= 125
o
C
• Low Conduction Loss
SymbolOrdering Information
PART NUMBER PACKAGE BRAND
HGT1S7N60A4S9A TO-263AB G7N60A4
HGTG7N60A4 TO-247 G7N60A4
HGTP7N60A4 TO-220AB G7N60A4
NOTE: When ordering, use the entire part number.
C
E
G
Packaging
JEDEC STYLE TO-247 JEDEC TO-220AB
JEDEC TO-263AB
COLLECTOR
(BOTTOM SI DE METAL)
C
E
G
C
E
G
COLLECTOR
(FLANGE)
G
COLLECTOR
(FLANGE)
E
Data Sheet September 2004
HGTP7N60A4