The UF3SC065030D8S is now end-of-life and not recommended for
new designs. The UF3SC065030B7S is recommended as a
replacement.
This SiC FET device is based on a unique ‘cascode’ circuit configuration, in
which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a
normally-off SiC FET device. The device’s standard gate-drive characteristics
allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si
superjunction devices. Available in the DFN8X8-4L package, this device
exhibits ultra-low gate charge and exceptional reverse recovery
characteristics, making it ideal for switching inductive loads , and any
application requiring standard gate drive.