TIP32-TIP32C
1/ 3
©GUANGDONGHOTTECHINDUSTRIALCO.,LTD E-mail:hkt@heketai.com
BIPOLAR TRANSISTOR (PNP)
FEATURES
Medium Power Linear Switching Applications
MECHANICALDATA
Case:TO-220
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Case Material: Molded Plastic. UL flammability
Classification Rating: 94V-0
Moisture Sensitivity: Level 1 perJ-STD-020
Weight:2.30grams(approximate)
MAXIMUM RATINGS (T
A
= 25°C unless otherwise noted)
Parameter Symbol
Value
Unit
TIP32 TIP32A TIP32B TIP32C
Collector-Base Voltage V
CBO
-40 -60 -80 -100 V
Collector-Emitter Voltage V
CEO
-40 -60 -80 -100 V
Emitter-Base Voltage V
EBO
-5 V
Collector Current I
C
-3 A
Collector Power Dissipation P
C
2 W
Junction Temperature Tj 150 °C
Storage Temperature Range Tstg -55~+150 °C
Thermal Resistance from Junction to Ambient
R
θJA
62.5
°C/W
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise specified)
Parameter Symbol Min Max Unit Test conditions
Collector-base breakdown voltage
TIP32
TIP32A
TIP32B
TIP32C
V
(BR)CBO
-40
-60
-80
-100
V I
C
=-1mA, I
E
=0
Collector-emitter breakdown voltage
TIP32
TIP32A
TIP32B
TIP32C
V
CEO(sus)
*
-40
-60
-80
-100
V I
C
=-30mA, I
B
=0
Emitter-base breakdown voltage V
(BR)EBO
-5
V I
E
=-1mA, I
C
=0
Collector cut-off current
TIP32
TIP32A
TIP32B
TIP32C
I
CBO
-200 uA
V
CB
=-40V, I
E
=0
V
CB
=-60V, I
E
=0
V
CB
=-80V, I
E
=0
V
CB
=-100V, I
E
=0
Collector cut-off current
TIP32&32A
TIP32B&32C
I
CEO
-0.3 mA
V
CE
=-30V, I
B
=0
V
CE
=-60V, I
B
=0
Emitter cut-off current I
EBO
-1 mA V
EB
=-5V, I
C
=0
DC current gain
h
FE(1)
25
V
CE
=-4V, I
C
=-1A
h
FE(2)
15 75
V
CE
=-4V, I
C
=-3A
Collector-emitter saturation voltage V
CE(sat)
-1.2 V I
C
=-3A, I
B
=-0.375A
Base-emitter voltage V
BE(on)
-1.8 V V
CE
=-4V, I
C
=-3A
Transition frequency f
T
3
MHz V
CE
=-10V, I
C
=-0.5A
*
Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%.
1.BASE
2.COLLECTOR
3.EMITTER
TO-220
Equivalent Circuit
TIP32-TIP32C
2/ 3
©GUANGDONGHOTTECHINDUSTRIALCO.,LTD E-mail:hkt@heketai.com
BIPOLAR TRANSISTOR (PNP)
Typical Characteristics
-0.1 -1 -10
10
100
1000
10000
-1 -10 -100 -1000
0
20
40
60
80
100
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2
-1
-10
-100
-1000
0 25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
-1 -10 -100 -1000
-0.01
-0.1
-0 -2 -4 -6 -8
-0
-1
-2
-3
-4
-1 -10 -100 -1000
-0.0
-0.4
-0.8
-1.2
f=1MHz
I
E
=0/I
C
=0
T
a
=25
℃
-20
V
CB
/ V
EB
C
ob
/ C
ib
——
C
ob
C
ib
CAPACITANCE C (pF)
REVERSE VOLTAGE V (V)
-0.5
COMMON EMITTER
V
CE
=-4V
-3000
I
C
T
a
=25
℃
T
a
=100
℃
DC CURRENT GAIN h
FE
COLLECTOR CURRENT I
C
(mA)
V
BE
I
C
——
COMMON EMITTER
V
CE
=-4V
-3000
T
a
=100
℃
T
a
=25
℃
COLLECTOR CURRENT I
C
(mA)
BASE-EMMITER VOLTAGE V
BE
(V)
P
C
—— T
a
COLLECTOR POWER DISSIPATION
P
C
(W)
AMBIENT TEMPERATURE T
a
( )
℃
h
FE
——
-3000
β=8
T
a
=100
℃
T
a
=25
℃
I
C
V
CEsat
——
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(V)
COLLECTOR CURRENT I
C
(mA)
Static Characteristic
-100mA
-90mA
-80mA
-70mA
-60mA
-50mA
-40mA
-30mA
-20mA
I
B
=-10mA
COMMON EMITTER
T
a
=25
℃
COLLECTOR CURRENT I
C
(A)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
-3000
β=8
I
C
V
BEsat
——
T
a
=100
℃
T
a
=25
℃
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(V)
COLLECTOR CURRENT I
C
(mA)