1
/ 4
©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt
@
heketai.com
SCHOTTKY BARRIER DIODE
FEATURES
Low Forward Voltage
Fast Switching Time
Low Reverse Capacitance
Small Surface Mount device
PN Junction Guard Ring for Transient and ESD Protection
SOD-123
MECHANICAL DATA
Case: SOD-123
Case Material: Molded Plastic. UL flammability
Classification Rating: 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Weight: 0.005 grams (approximate)
MAXIMUM RATINGS (T
A
= 25°C unless otherwise noted)
Parameter Symbol Value Unit
Peak Reverse Voltage
V
R
70 V
RMS Reverse Voltage
V
R(RMS)
49 V
MAX Forward current
IFM
15 mA
Power Dissipation PD 250 mW
Thermal Resistance From Junction To Ambient
R
θJA
300 °C/W
Junction Temperature TJ 125 °C
Storage Temperature TSTG -55 ~+150 °C
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise specified)
Parameter Symbol Min Typ Max Unit Conditions
Reverse voltage VR
70
V
I
R
=10
u
A
Forward voltage VF
0.41
V
I
F
=1mA
1.0
I
F
=15mA
Reverse voltage leakage current
I
R
200 nA
V
R
=50V
Reverse recovery time
T
RR
1.0 nS
I
F
=I
R
=200mA,I
rr
=0.1XI
R
,R
L
=100Ω
1N5711W
2
/ 4
©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt
@
heketai.com
SCHOTTKY BARRIER DIODE
Typical Characteristics
0
1
2
01020304050
C , CAPACITANCE (pF)
j
V , REVERSE VOLTAGE (V)
R
Fig.5Typ. Junction Capacitance vs Reverse Voltage
T=25C
j
°
0.01
0.1
1
10
100
0
10
20
30
40
50
I , REVERSE CURRENT (
A)
R
µ
V , REVERSE VOLTAGE (V)
R
Fig. 4 Typical Reverse Characteristics
T = 125°C
j
T = 50°C
j
T = 150°C
j
T = 100°C
j
T = 75°C
j
T = 25°C
j
0
100
80
60
40
20
0 0.5 1
I , FORWARD CURRENT (mA)
F
V , FORWARD VOLTAGE (V)
F
Fig.3Typical Forward Characteristics
0.01
0.1
1.0
10
0 0.5 1.0
I , FORWARD CURRENT (mA)
F
V , FORWARD VOLTAGE (V)
Fi
g.2Typical Forward Characteristics
F
0
50
150
250
3
5
0
025
50
75
125 150
P , POWER DISSIPATION (mW)
d
T , AMBIENT TEMPERATURE (°C)
Fi
g.1 Power Derating Curve
A
100
100
200
300
1N5711W