©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@heketai.com 1 / 5
Planar Die Construction
350mW Power Dissipation on Ceramic PCB
eneral Purpose, Medium Current
Ideally Suited for Automated Assembly Processes
MECHANICAL DATA
Case: SOD-123 Molded Plastic
Terminals: Solderable per MIL-STD-202,Method 208
Polarity: Cathode Band
Weight: 0.01 grams (approx.)
Characteristic
Symbol
Value
Unit
Forward Voltage (Note 2) @ I
F
= 10mA
V
F
0.9
V
Power Dissipation(Note 1)
P
D
350
mW
Thermal Resistance, Junction to Ambient Air
R
θJ
357
°C
/W
Junction Temperature
TJ
1 50
°C
Operating and Storage Temperature Range
T
j
,T
S T
-65~ +150 °C
—
SOD-123
BZT52C2V4 - 43
ZENER DIODES
Notes: 1. Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas 25mm
2
2. Short duration test pulse used to minimize
self-heating effect
3. f=1K
H
Z
FEA TURES
Cathode
10
MAXIMUM RATINGS (T
A
= 25°C unless otherwise noted)
©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@heketai.com 2 / 5
ELECTRICAL CHARACTERISTICS @ Ta=25°C unless otherwise specified
Zener Voltage Range (Note 2)
Maximum
Zener
Impedance
(Note
3)
Maximum
Reverse
Current
(Note
2)
V
Z
@I
ZT
I
ZT
Z
ZT
@I
ZT
Z
ZK
@I
ZK
I
ZK
I
R
V
R
Typical
Temperature
Coefficent
@I
Z
T
C
mV/°C
Test
Current
I
ZTC
Type
Number
Nom(V) Min(V) Max(V) mA
Ω
mA uA
V
Min Max mA
BZT52C2V4
2.4
2.20 2.60
5
100
600
1.0 50 1.0 -3.5
0
5
BZT52C2V7
2.7
2.5
2.9
5
100
600
1.0 20 1.0 -3.5
0
5
BZT52C3V0
3.0
2.8
3.2
5
95
600
1.0 10 1.0 -3.5
0
5
BZT52C3V3
3.3
3.1
3.5
5
95
600
1.0
5
1.0 -3.5
0
5
BZT52C3V6
3.6
3.4
3.8
5
90
600
1.0
5
1.0 -3.5
0
5
BZT52C3V9
3.9
3.7
4.1
5
90
600
1.0
3
1.0 -3.5
0
5
BZT52C4V3
4.3
4.0
4.6
5
90
600
1.0
3
1.0 -3.5
0
5
BZT52C4V7
4.7
4.4
5.0
5
80
500
1.0
3
2.0 -3.5 0.2
5
BZT52C5V1
5.1
4.8
5.4
5
60
480
1.0
2
2.0 -2.7 1.2
5
BZT52C5V6
5.6
5.2
6.0
5
40
400
1.0
1
2.0 -2.0 2.5
5
BZT52C6V2
6.2
5.8
6.6
5
10
150
1.0
3
4.0 0.4 3.7
5
BZT52C6V8
6.8
6.4
7.2
5
15
80
1.0
2
4.0 1.2 4.5
5
BZT52C7V5
7.5
7.0
7.9
5
15
80
1.0
1
5.0 2.5 5.3
5
BZT52C8V2
8.2
7.7
8.7
5
15
80
1.0 0.7 5.0 3.2 6.2
5
BZT52C9V1
9.1
8.5
9.6
5
15
100
1.0 0.5 6.0 3.8 7.0
5
BZT52C10
10
9.4
10.6
5
20
150
1.0 0.2 7.0 4.5 8.0
5
BZT52C11
11
10.4 11.6
5
20
150
1.0 0.1 8.0 5.4 9.0
5
BZT52C12
12
11.4 12.7
5
25
150
1.0 0.1 8.0 6.0 10.0
5
BZT52C13
13
12.4 14.1
5
30
170
1.0 0.1 8.0 7.0 11.0
5
BZT52C15
15
13.8 15.6
5
30
200
1.0 0.1 10.5 9.2 13.0
5
BZT52C16
16
15.3 17.1
5
40
200
1.0 0.1 11.2 10.4 14.0
5
BZT52C18
18
16.8 19.1
5
45
225
1.0 0.1 12.6 12.4 16.0
5
BZT52C20
20
18.8 21.2
5
55
225
1.0 0.1 14.0 14.4 18.0
5
BZT52C22
22
20.8 23.3
5
55
250
1.0 0.1 15.4 16.4 20.0
5
BZT52C24
24
22.8 25.6
5
70
250
1.0 0.1 16.8 18.4 22.0
5
BZT52C27
27
25.1 28.9
2
80
300
0.5 0.1 18.9 21.4 25.3
2
BZT52C30
30
28.0 32.0
2
80
300
0.5 0.1 21.0 24.4 29.4
2
BZT52C33
33
31.0 35.0
2
80
325
0.5 0.1 23.1 27.4 33.4
2
BZT52C36
36
34.0 38.0
2
90
350
0.5 0.1 25.2 30.4 37.4
2
BZT52C39
39
37.0 41.0
2
130
350
0.5 0.1 27.3 33.4 41.2
2
BZT52C43
43
40.0 46.0
5
100
700
1.0 0.1
32
10.0 12.0
5
Notes: 1. Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas 25mm2
2. Short duration test pulse used to minimize self-heating effect
3. f=1KHZ
BZT52C2V4 - 43
ZENER DIODES