REV 1.0 2021 JAN
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1.BASE
2.EMITTER
3.COLLECTOR
General Purpose Transistor
NPN Silicon
S9014
FEATURES
Marking
Type number Marking code
S9014
J6
CLASSIFICATION OF hFE
Rank
L
Range
200-450
H
450-1000
• Complementary to S9014
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage VCEO 45 Vdc
Collector–Base Voltage
VCBO
50 Vdc
Emitter–Base Voltage VEBO 5.0 Vdc
Collector Current — Continuous IC 100 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
PD
200 mW
Junction and Storage Temperature
TJ,Tstg
°C
–55 to +150
e
D
E
M
A
C
H
E
L
L
1
a
ee
UNIT
mm
mil
max
min
max
min
A C D E HE e M L L1 a
1.1 0.15 1.4 3.0 2.6 0.5
0.55
(ref)
0.36
(ref)
0.0
0.9 0.08
1.2
2.8 2.2 0.3
43 6 55 118 102 20
35 3 47 110 87 12
14
(ref)
6
22
(ref)
SOT-23 mechanical data
0.15
0.0
1.95
1.7
77
67
S9014
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REV 1.0 2021 JAN
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3)
(IC = 0.1 mAdc, IB = 0)
Characteristic Symbol Max Unit
Min
V(BR)CEO
–45
Vdc
Collector–Base Breakdown Voltage
(IC = 100 µAdc, IE = 0)
V(BR)CBO
–50
Vdc
Emitter–Base Breakdown Voltage
(IE = 100 µAdc, IC = 0)
V(BR)EBO
–
5.0
Vdc
Collector cut-off current
(VCB= 50 Vdc, )IE = 0
ICBO
0.1–
uAdc
Collector cut-off current
(V E = 35Vdc, )C IB = 0
I EOC
1–
uAdc
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width <300 µs, Duty Cycle <2.0%.
Emitter cut-off current
(VEB = 3Vdc, )IC = 0
IEBO
0.1–
uAdc
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
ON CHARACTERISTIC
S (
3
)
Characteristic Symbol Min Max Unit
DC Current Gain
(IC =1.0 mAdc, VCE =5 Vdc)
hFE
—
200
1000
Collector–Emitter Saturation Voltage
(IC = 100 mAdc, IB = 5 mAdc)(3)
Base–Emitter Saturation Voltage(3)
(IC = 100 mAdc, IB = 5mAdc)
VCE(sat)
VBE(sat)
—
—
0.3
1.0
Vdc
Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 10mAdc, VCE= 5.0Vdc, f =30MHz)
fT
150
—
MHz