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FQP50N06L — N-Channel QFET
®
MOSFET
©2001 Semiconductor Components Industries
, LLC.
October-2017,
Rev.
3
Publication Order Number:
FQP50N06L/D
FQP50N06L
N-Channel QFET
®
MOSFET
60 V, 52.4 A, 21 mΩ
Description
This N-Channel enhancement mode power MOSFET is
produced using ON Semiconductor’s proprietary
planar stripe and DMOS tec
hnology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
audio amplifier, DC motor control, and variable switching
power applications.
Features
• 52.4 A, 60 V, R
DS(on)
= 21 mΩ (Max.) @ V
GS
= 10 V,
I
D
= 26.2 A
• Low Gate Charge (Typ. 24.5 nC)
• Low Crss (Typ. 90 pF)
• 100% Avalanche Tested
• 175°C Maximum Junction Temperature Rating
TO-220
G
D
S
G
S
D
Absolute Maximum Ratings T
C
= 25°C unless otherwise noted.
Thermal Characteristics
Symbol Parameter FQP50N06L Unit
V
DSS
Drain-Source Voltage 60 V
I
D
Drain Current
- Continuous (T
C
= 25°C)
52.4 A
- Continuous (T
C
= 100°C)
37.1 A
I
DM
Drain Current - Pulsed
(Note 1)
210 A
V
GSS
Gate-Source Voltage ± 20 V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
990 mJ
I
AR
Avalanche Current
(Note 1)
52.4 A
E
AR
Repetitive Avalanche Energy
(Note 1)
12.1 mJ
dv/dt Peak Diode Recovery dv/dt
(Note 3)
7.0 V/ns
P
D
Power Dissipation (T
C
= 25°C)
121 W
- Derate above 25°C 0.81 W/°C
T
J
, T
STG
Operating and Storage Temperature Range -55 to +175 °C
T
L
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 seconds
300 °C
Symbol Parameter FQP50N06L Unit
R
θJC
Thermal Resistance, Junction-to-Case, Max. 1.24 °C/W
R
θJA
Thermal Resistance, Junction-to-Ambient, Max. 62.5 °C/W