Planar Die Construction
Ultra-Small Surface Mount Package
Ideally suited for Automated Assembly
Processes
Maximum
Ratings
Characteristic Symbol Value Unit
Forward Voltage (Note1) @ I
F
= 10mA
V
F
0.9 V
Power Dissipation 1
P
d
200 mW
Thermal Resistance, J
unction to Ambient Air
R
qJA
625 °C/W
Operating and Storage Temperature Range
T
j,
T
STG
-65 to +150 °C
Notes: 1. Short duration test pulse used in minimize self-heating effect.
Case: SOD-323, Plasti
c
Case material - UL Flammability Rating
Classification 94V-0
Polarity: Cathode Band
Weight: 0.004 grams (approx.)
Maximum Ratings and Electrical Characteristics
Rating at 25
o
C ambient temperature unless otherwise specified.
Features
M
echanical Data
SOD-323
Dimensions in inches and (millimeters)
BZT52C2V0S-BZT52C39S
0.2W Zener Diode
h
ttp://www.lgesemi.com
mai
l:lge@lgesemi.com
Revision:20170701-P1
1.7
-0.1
+0.1
2.6
-0.1
+0.1
1.3
-
+
0.
0.
1
1
0.1
-
+
0.
0.0
02
5
0.475
0.375
0.3
-
+
0.
0.
05
05
0.85
-0.05
+0.05
1.0max
Type
Number
Marking
Code
Zener Voltage Range
(Note 2)
Maximum Zener Impedance
(Note 3)
Maximum
Reverse
Current
(Note 2)
Temperature
Coefficient of
Zener Voltage
@I
ZT
= 5mA
mV/°C
V
Z
@I
ZT
I
ZT
Z
ZT
@I
ZT
Z
ZK
@ I
ZK
I
ZK
I
R
V
R
Nom (V) Min (V) Max (V) (mA)
W
mA uA V Min Max
BZT52C2V0S
WY 2.0 1.91 2.09 5 100 600 1.0 150 1.0 -3.5 0
BZT52C2V4S
WX 2.4 2.20 2.60 5 100 600 1.0 50 1.0 -3.5 0
BZT52C2V7S
W1 2.7 2.5 2.9 5 100 600 1.0 20 1.0 -3.5 0
BZT52C3V0S
W2 3.0 2.8 3.2 5 95 600 1.0 10 1.0 -3.5 0
BZT52C3V3S
W3 3.3 3.1 3.5 5 95 600 1.0 5 1.0 -3.5 0
BZT52C3V6S
W4 3.6 3.4 3.8 5 90 600 1.0 5 1.0 -3.5 0
BZT52C3V9S
W5 3.9 3.7 4.1 5 90 600 1.0 3 1.0 -3.5 0
BZT52C4V3S
W6 4.3 4.0 4.6 5 90 600 1.0 3 1.0 -3.5 0
BZT52C4V7S
W7 4.7 4.4 5.0 5 80 500 1.0 3 2.0 -3.5 0.2
BZT52C5V1S
W8 5.1 4.8 5.4 5 60 480 1.0 2 2.0 -2.7 1.2
BZT52C5V6S
W9 5.6 5.2 6.0 5 40 400 1.0 1 2.0 -2.0 2.5
BZT52C6V2S
WA 6.2 5.8 6.6 5 10 150 1.0 3 4.0 0.4 3.7
BZT52C6V8S
WB 6.8 6.4 7.2 5 15 80 1.0 2 4.0 1.2 4.5
BZT52C7V5S
WC 7.5 7.0 7.9 5 15 80 1.0 1 5.0 2.5 5.3
BZT52C8V2S
WD 8.2 7.7 8.7 5 15 80 1.0 0.7 5.0 3.2 6.2
BZT52C9V1S
WE 9.1 8.5 9.6 5 15 100 1.0 0.5 6.0 3.8 7.0
BZT52C10S
WF 10 9.4 10.6 5 20 150 1.0 0.2 7.0 4.5 8.0
BZT52C11S
WG 11 10.4 11.6 5 20 150 1.0 0.1 8.0 5.4 9.0
BZT52C12S
WH 12 11.4 12.7 5 25 150 1.0 0.1 8.0 6.0 10.0
BZT52C13S
WI 13 12.4 14.1 5 30 170 1.0 0.1 8.0 7.0 11.0
BZT52C15S
WJ 15 13.8 15.6 5 30 200 1.0 0.1 10.5 9.2 13.0
BZT52C16S
WK 16 15.3 17.1 5 40 200 1.0 0.1 11.2 10.4 14.0
BZT52C18S
WL 18 16.8 19.1 5 45 225 1.0 0.1 12.6 12.4 16.0
BZT52C20S
WM 20 18.8 21.2 5 55 225 1.0 0.1 14.0 14.4 18.0
BZT52C22S
WN 22 20.8 23.3 5 55 250 1.0 0.1 15.4 16.4 20.0
BZT52C24S
WO 24 22.8 25.6 5 70 250 1.0 0.1 16.8 18.4 22.0
BZT52C27S
WP 27 25.1 28.9 2 80 300 0.5 0.1 18.9 21.4 25.3
BZT52C30S
WQ 30 28.0 32.0 2 80 300 0.5 0.1 21.0 24.4 29.4
BZT52C33S
WR 33 31.0 35.0 2 80 325 0.5 0.1 23.1 27.4 33.4
BZT52C36S
WS 36 34.0 38.0 2 90 350 0.5 0.1 25.2 30.4 37.4
BZT52C39S
WT 39 37.0 41.0 2 130 350 0.5 0.1 27.3 33.4 41.2
Electrical Characteristics
Notes: 2. Short duration test pulse used to minimize self-heating effect.
3. f = 1kHz.
BZT52C2V0S-BZT52C39S
0.2W Zener Diode
http://ww
w.lgesemi.com
ma
il:lge@lgesemi.com
Revision:20170701-P1