BSS84
Document number: DS30149 Rev. 24 - 2
1 of 6
www.diodes.com
April 2021
© Diodes Incorporated
BSS84
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BV
DSS
R
DS(ON) max
I
D
T
A
= +25°C
-50V
10Ω @ V
GS
= -5V
-130mA
Description and Applications
This MOSFET has been designed to minimize on-
state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high-efficiency power management applications.
• General Purpose Interfacing Switch
• Power Management Functions
• Analog Switch
Features and Benefits
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
•
For automotive applications requiring specific change control
(i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and
manufactured in IATF 16949 certified facilities), please refer
to the related automotive grade (Q-suffix) part. A listing can
be found at
https://www.diodes.com/products/automotive/automotive-
products/.
• This part is qualified to JEDEC standards (as references in
AEC-Q) for High Reliability.
https://www.diodes.com/quality/product-definitions/
• An Automotive-Compliant Part is Available Under Separate
Datasheet (BSS84Q)
Mechanical Data
• Case: SOT23
• Case Material: UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish (Lead Free Plating) Solderable per
MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Weight: 0.009 grams (Approximate)
Ordering Information (Note 4)
Part Number
Case
Packaging
BSS84-7-F
SOT23
3000/Tape & Reel
BSS84-13-F
SOT23
10000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
SOT23
Top View
Equivalent Circuit
Top View
D
G
S
e3
D
S
G
BSS84
Document number: DS30149 Rev. 24 - 2
2 of 6
www.diodes.com
April 2021
© Diodes Incorporated
BSS84
Marking Information
Date Code Key
Year
1998
……
2021
2022
2023
2024
2025
2026
2027
2028
2029
2030
Code
J
……
I
J
K
L
M
N
O
P
R
S
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
Maximum Ratings (@ T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
-50
V
Drain-Gate Voltage R
GS
≤ 20kΩ
V
DGR
-50
V
Gate-Source Voltage Continuous
V
GSS
±20
V
Drain Current (Note 5) Continuous
I
D
-130
mA
Pulsed Drain Current
I
DM
-1.2
A
Thermal Characteristics (@ T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Total Power Dissipation (Note 5)
P
D
300
mW
Thermal Resistance, Junction to Ambient
R
θ
JA
417
°C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150
°C
Electrical Characteristics (@ T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
-50
V
V
GS
= 0V, I
D
= -250µA
Zero Gate Voltage Drain Current
I
DSS
-1
-2
-100
µA
µA
nA
V
DS
= -50V, V
GS
= 0V, T
J
= +25°C
V
DS
= -50V, V
GS
= 0V, T
J
= +125°C
V
DS
= -25V, V
GS
= 0V, T
J
= +25°C
Gate-Body Leakage
I
GSS
±10
nA
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS(TH)
-0.8
-2.0
V
V
DS
= V
GS
, I
D
= -1mA
Static Drain-Source On-Resistance
R
DS(ON)
3.2
10
Ω
V
GS
= -5V, I
D
= -0.100A
Forward Transconductance
g
FS
0.05
S
V
DS
= -25V, I
D
= -0.1A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C
iss
24.6
45
pF
V
DS
= -25V, V
GS
= 0V, f = 1.0MHz
Output Capacitance
C
oss
4.7
25
pF
Reverse Transfer Capacitance
C
rss
2.8
12
pF
Gate Resistance
R
g
916
Ω
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= -4.5V)
Q
g
0.28
nC
V
DS
= -10V, I
D
= -0.1A
Total Gate Charge (V
GS
= -10V)
Q
g
0.59
nC
Gate-Source Charge
Q
gs
0.09
nC
Gate-Drain Charge
Q
gd
0.08
nC
Turn-On Delay Time
t
D(ON)
10
ns
V
DD
= -30V, I
D
= -0.27A,
R
GEN
= 50Ω, V
GS
= -10V
Turn-Off Delay Time
t
D(OFF)
18
ns
Notes: 5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown in Diodes Incorporated’s package outline PDFs, which can be found
on our website at http://www.diodes.com/package-outlines.html.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
K84 = Product Type Marking Code
YM
= Date Code Marking
Y
or Y = Year (ex: I = 2021)
M
or M = Month (ex: 9 = September)