ASC300N1200MD3
1
1200V SiC MOSFET Module
• AlSiC Baseplate and Aluminum Oxide Insulator
System Benefits
• Enables Compact, Lightweight, Efficient Systems
• Harsh Outdoor Environment Installation
• Mitigates Over-voltage Protection
• Reduced Thermal Requirements
• Reduced System Cost
Package 151mm x 103mm x 35.2mm
Part Number
Package
Marking
ASC600N1200MD3
DWC3
ASC300N1200MD3
Absolute Maximum Ratings (TC = 25℃ unless otherwise specified)
Symbol
Parameter
Value
Unit
V
DS
Drain-Source Voltage
1200
V
V
GS
Gate-Source Voltage
-4/+20
V
I
D
Drain Current(continuous) V GS =20V
300
A
I
DM
Drain Current (10us pulsed)
600
A
P
D
Power Dissipation T
C
= 25°C
960
W
T
C,
Tstg
Operating and Storage Temperature Range
-40 to +150
℃
T
J
Junction Temperature
175
℃
LStray
Stray Inductance
20
nH
Features
• High Temperature, Humidity, and Bias Operation
• Ultra Low Loss
• High-Frequency Operation
• Zero Turn-off Tail Current from MOSFET
• Normally-off, Fail-safe Device Operation
• Ease of Paralleling
ASC300N1200MD3
2
Electrical Characteristic
s (TC = 25℃ unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BV
DS
Drain-source BreakdownVoltage
I
D
=1.2mA,V
GS
=0V
1200
V
I
DSS
Zero Gate Voltage Drain Current
V
DS
=1200V, V
GS
=0V
5
500
uA
I
GSS
Gate-body Leakage Current
V
GS
=20V,V
DS
=0V
1.3
uA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS,
I
D
=50mA
2
4
V
R
DS(on)
Static Drain-source On Resistance
V
GS
=20V, I
D
=200A
7
10
mΩ
RG
Gate Resistance
V
GS
=0V,f=1MHz
5
Ciss
Input Capacitance
VDS=800V， f=200kHZ,
VAC=25mV
19
nF
Coss
Output Capacitance
1.5
Crss
Reverse Transfer Capacitance
0.26
Eon
Turn-On Switching Energy
VDD=600V,VGS=-4/+20V
ID=180A,RG(ext=5)
Load=77uH,TJ=150℃
7.6
mJ
Eoff
Turn-Off Switching Energy
9.1
mJ
QGS
Gate-Source Charge
VDD=800V, VGS=-4/+20V
ID=200A,
95
nC
QGD
Gate-Drain Charge
180
QG
Total Gate Charge
610
td（on）
Turn-on delay time
VDD=600V,VGS=-4/+20V
ID=180A,RG(ext=5)
Load=77uH,TJ=150℃
22
nS
tr
Rise Time
56
td(off)
Turn-off delay time
32
tf
Fall Time
35
Vsd
Diode Forward voltage
If=150A, VGS=0
6
V
Thermal Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
RJC
Thermal Resistance, Junction-to-Case
Tc=90℃，PD=150W
0.13
C/W