ASC30N1200MT3
1
1200V N-Channel MOSFET
Description
Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching
performance and higher reliability compared to Silicon. In addition, the low ON resistance and
compact chip size ensure low capacitance and gate charge. Consequently, system benefits include
highest efficiency, faster operating frequency, increased power density, reduced EMI, and
reduced system size.
Features
High Speed Switching with Low Capacitances
High Blocking Voltage with Low RDS(on)
Simple to drive with Standard Gate Drive
100% avalanche tested
Maximum junction temperature of 150°C
ROHS Compliant
Application
EV Charging
DC-AC Inverters
High Voltage DC/DC Converters
Switch Mode Power Supplies
Power Factor Correction Modules
Motor Drives
Ordering Information
Part Number
Marking
Package
Packaging
ASC30N1200MT3 ASC30N1200MT3 TO-247 Tube
ASC30N1200MT3
2
Absolute Maximum Ratings(Tc=25
℃
)
Symbol Parameter Value Unit
V
DS
Drain-Source Voltage 1200 V
I
D
Drain Current(continuous)at Tc=25℃ 30 A
I
D
Drain Current(continuous)at Tc=100℃ 20 A
I
DM
Drain Current (pulsed) 90 A
V
GS
Gate-Source Voltage Operation -10/+25 V
P
D
Power Dissipation T
C
= 25°C 208 W
T
J,
Tstg Junction and Storage Temperature Range -55 to +150 ℃
Electrical Characteristics(TJ = 25
℃
unless otherwise specified)
Typical Performance-Static
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BV
DS
Drain-source Breakdown
Voltage
I
D
=250uA,V
GS
=0V 1200 V
I
DSS
Zero Gate Voltage Drain
Current
V
DS
=1200V, V
GS
=0V,
T
J=25°C
100 uA
I
GSS
Gate-body Leakage Current V
DS
=0V ; V
GS
=-10 to 20V 250 nA
V
GS(th)
Gate Threshold Voltage V
DS
= V
GS,
I
D
=5mA 2 3 4 V
R
DS(on)
Static Drain-
source On
Resistance
V
GS
=20V, I
D
=30A 80 100 mΩ
RG Gate Resistance V
GS
=0V,f=1MHz 5
Ω
Typical Performance-Dynamic
C
iss
Input Capacitance
V
DS
=400V,f=1MH
Z
,V
GS
=0V
1290 pF
C
oss
Output Capacitance 130 pF
C
rss
Reverse Transfer Capacitance 32 pF
Q
g
Total Gate Charge
V
DS
=800V,
I
D
=20A,V
GS
=0~20V
106 nC
Q
gs
Gate-source Charge 18 nC
Q
gd
Gate-Drain Charge 38 nC
t
d(on)
Turn-on Delay Time
V
DD
=800V,ID=30A,
V
GS
=-0V~20V,
R
G
=0Ω,
20 ns
t
r
Rise Time 25 ns
t
d(off)
Turn-off Delay Time 46 ns
t
f
Fall Time 22 ns