Si APD
S14124-20
High-sensitivity Si APD for detection of light
with a wavelength of 266 nm
1
www.hamamatsu.com
Structure
Parameter Symbol Specification Unit
Photosensitive area A ϕ2.0 mm
Package - TO-8 -
Window material - AR-coated quartz -
Absolute maximum ratings (Ta=25 °C)
Parameter Symbol Condition Valu Unit
Forward current IF max 10 mA
Reverse current (DC) IR max 200 µA
Operating temperature Topr No dew condensation
*1
-20 to +60 °C
Starage temperature Tstg No dew condensation
*1
-55 to +100 °C
Soldering conditions - 260 °C or less, within 10 s -
*1: When there is a temperature dierence between a product and the surounding area in high humidity environment, dew condensation
may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and reliability.
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product
within the absolute maximum ratings.
Electrical and optical characteristics (Ta=25 °C)
Parameter Symbol Condition Min. Typ. Max. Unit
Peak sensitivity wavelength λp M=50 - 600 - nm
Quantum efficiency QE M=1, λ=266 nm 70 87 - %
Beakdown voltage VBR ID=10 µA 360 400 500 V
Temperature coefficient of breakdown voltage
∆TVBR 0.78 V/°C
Dark current ID M=50 - 3 10 nA
Temperature coefficient of dark current
∆TID - 1.1 - times/°C
Cutoff frequency fc
M=50, λ=266 nm
RL=50 Ω, -3 dB
- 250 - MHz
Terminal capacitance Ct M=50, f=1 MHz - 11 - pF
Excess noise index x M=50, λ=266 nm - 0.2 - -
Gain M λ=266 nm - 50 to 400 - -
Features
High sensitivity, quantum efficency: 87% (λ=266 nm)
Low capacitance
Low noise
High gain
Applications
Semiconductor inspection system
Laser processing equipment
Mask defect inspection system
The S14124-20 is an improved Si APD from the S8664 series for highly sensitive detection of light with a wavelength of
266 nm used in semiconductor inspection and laser processing equipment. We have achieved a quantum eciency of
87% at λ=266 nm.
Si APD S14124-20
2
Quantum eciency vs. wavelength
KAPDB0568EA
KAPDB0568EA
Quantum efficiency vs. wavelength
40
100
80
60
0
20
Quantum efficiency (%)
Wavelength (nm)
200 240 280 320 360 400
(Typ. M=1, Ta=25 °C)
Dark current vs. reverse voltage
KAPDB0569EA
KAPDB0569EA
Dark current vs. reverse voltage
100 nA
100 µA
(Typ. Ta=25 °C)
10 µA
10 pA
100 pA
1 nA
1 µA
10 nA
Dark current
Reverse voltage (V)
100 200 300 400 500
Gain vs. reverse voltage
KAPDB0570EA
KAPDB0570EA
Gain vs. reverse voltage
(Typ. Ta=25 °C, λ=266 nm)
1000
1
100
10
Gain
Reverse voltage (V)
200 300250 350 400 450
-20 °C
60 °C
40 °C
20 °C
0 °C
Terminal capacitance vs. reverse voltage
KAPDB0571EA
KAPDB0571EA
Terminal capacitance vs. reverse voltage
(Typ. Ta=25 °C, f=1 MHz)
1 nF
100 pF
10 pF
1 pF
Terminal capacitance
Reverse voltage (V)
0 100 200 300 400 500