1
Si APD
S12023 series, etc.
Low bias operation, for 800 nm band
www.hamamatsu.com
Structure / Absolute maximum ratings
Type no.
Dimensional
outline/Window
material*
1
Package
Effective
photosensitive
area size*
2
Absolute maximum ratings
Operating
temperature
Topr
Storage
temperature
Tstg
Soldering
conditions
(mm) (°C) (°C)
S12023-02 (1)/K
TO-18
φ0.2
-20 to +85 -55 to +125
260 °C or less,
within 10 s
S12023-05 (1)/K
φ0.5
S12051 (2)/L
S12086 (3)/L
S12023-10 (1)/K
φ1.0
S12023-10A*
3
(1)/K
S3884 (4)/K
TO-5
φ1.5
S2384 (5)/K
φ3.0
S2385 (6)/K TO-8
φ5.0
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
*
1: K=borosilicate glass, L=lens type borosilicate glass
*
2: Photosensitive area in which a typical gain can be obtained
*
3: This is a variant of the S12023-10 in which the device chip is light-shielded by aluminum layer except for the photosensitive area.
These are 800 nm band near-infrared Si APDs that can operate at low voltages, 200 V or less. They are suitable for applications
such as FSO (free space optics) and optical rangefi nders.
FSO
Optical rangefi nders
Stable operation at low bias
High-speed response
High sensitivity and low noise
Features Applications
Si APD S12023 series, etc.
2
Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Type no.
Spectral
response
range
λ
Peak*
4
sensitivity
wavelength
λp
Photo-
sensitivity
S
M=1
λ
=800 nm
Quantum
efficiency
QE
M=1
λ=800 nm
Breakdown
voltage
V
BR
ID=100 μA
Temp.
co-
efficient
of V
BR
Dark*
4
current
I
D
Cutoff*
4
frequency
fc
R
L=50 Ω
Terminal*
4
capacitance
Ct
Excess*
4
noise
figure
x
λ
=800 nm
Gain
M
λ
=800 nm
(nm) (nm) (A/W) (%)
Typ.
(V)
Max.
(V) (V/°C)
Typ.
(nA)
Max.
(nA) (MHz) (pF)
S12023-02
400 to
1000
800 0.5 75 150 200 0.65
0.05 0.5 1000 1
0.3
100
S12023-05
0.1 1 900 2S12051
S12086
S12023-10
0.2 2 600 6
S12023-10A*
3
S3884 0.5 5 400 10
S2384 1 10 120 40 60
S2385 330 40 95 40
*4: Values measured at a gain listed in the characteristics table
Note: Breakdown voltage can be specifi ed by using the suffi x of type number as examples shown below.
S12023-02-01: 80 to 120 V
S12023-02-02: 120 to 160 V
S12023-02-03: 160 to 200 V
Spectral response Quantum efficiency vs. wavelength
Wavelength (nm)
Photosensitivity (A/W)
(Typ. Ta=25 °C, M at 800 nm)
200 400 600 800 1000300 500 700 900 1100
40
20
0
60
50
30
10
M=100
M=50
Wavelength (nm)
Quantum efficiency (%)
60
200 400 600 800 1000300 500 700 900 1100
40
20
0
80
100
(Typ. Ta=25 °C)
KAPDB0020EB KAPDB0021EA