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DC-0017765
2
MMP706x Series
Rev. V2
High Power Switching and Attenuation Silicon PIN Diodes
Environmental Capabilities
The MMP706x-11 Series of PIN diodes are capable
of meeting the environmental requirements of
MIL-STD-750 and MIL-STD-883.
Static Sensitivity
These electronic devices are sensitive to
electrostatic discharge (ESD) and can be damaged
by static electricity. Proper ESD control techniques
should be used when handling these (HBM) Class 0
devices.
Model
Reverse
Voltage
Breakdown
1
(V
BR
)
Junction
Capacitance
2
(C
J
)
Minority
Carrier
Lifetime
3
(T
L
)
Theta
(θ
JC
)
Series
Resistance
4
@ 1 mA
(R
S
)
Series
Resistance
@ 10 mA
(R
S
)
Series
Resistance
@ 100 mA
(R
S
)
V pF ns °C/W Ω Ω Ω
Min. Max. Typ. Max. Max. Max. Max.
MMP7060-11
250
0.05 1.0 20 25.0 10.0 2.0
MMP7061-11 0.08 1.0 20 20.0 8.0 1.5
MMP7062-11 0.10 1.0 20 15.0 6.0 1.2
MMP7063-11 0.20 1.0 15 8.0 3.5 1.0
MMP7064-11 0.30 1.5 15 6.0 2.0 0.8
MMP7065-11 0.08 1.5 15 40.0 8.0 1.5
500
MMP7067-11 0.20 1.5 12 10.0 4.0 1.0
MMP7068-11 0.30 2.0 10 8.0 3.5 0.8
MMP7069-11 0.50 2.0 10 6.0 2.0 0.7
1. Reverse Breakdown Voltage measured at 10 µA.
2. Junction Capacitance measured at 50 V, 1 MHz.
3. Minority Carrier lifetime measured with I
F
= 10 mA, I
R
= 10 mA.
4. Series Resistance is measured at 1 MHz using transmission loss techniques.
Electrical Specifications: T
A
= +25°C
Absolute Maximum Ratings
Operating Temperature -55°C to +150°C
Storage Temperature -65°C to +200°C
Assembly Temperature <300°C for 5 seconds
Assembly Instructions
Die attach of MMP706x silicon PIN diode chips may
be accomplished with conductive epoxy or a eutectic
solder such as Au(80%)/Sn(20%) or Au(88%)/
Ge(12%). Electrical connection to the cathode may
be made with a Au wire or ribbon, utilizing thermo
compression or thermosonic bonding. Care should
be exercised to not employ excessive pressure or
ultrasonic energy while wire/ribbon bonding to avoid
physical damage to the die.