AiT Semiconductor Inc.
www.ait-ic.com
MMBD7000
SWITCHING DIODES
REV1.0 - AUG 2021 RELEASED - - 1 -
DESCRIPTION
FEATURES
The MMBD7000 is available in SOT-23 package.
Style C
⚫ Fast Switching Speed
⚫ Surface Mount Package Ideally Suited for
Automatic Insertion
⚫ For General Purpose Switching Applications
⚫ High Conductance
⚫ Available in SOT-23 package
ORDERING INFORMATION
MECHANICAL DATA
Package Type
Part Number
SOT-23
MMBD7000
Note
SPQ: 3,000pcs/Reel
Case: SOT-23, Molded Plastic
Case material-UL Flammability Rating
Classification 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solder per MIL-STD-202, Method 208
Polarity: See Diagram
Weight: 0.008 grams (approx.)
PIN DESCRIPTION
AiT Semiconductor Inc.
www.ait-ic.com
MMBD7000
SWITCHING DIODES
REV1.0 - AUG 2021 RELEASED - - 2 -
ABSOLUTE MAXIMUM RATINGS
T
A
= 25℃, unless otherwise specified
V
RM
, Non-Repetitive Peak Reverse Voltage
100V
V
RRM
, Peak Repetitive Reverse Voltage
V
RWM
, Working Peak Reverse Voltage
V
R
, DC Blocking Voltage
75V
V
R(RMS)
, RMS Reverse Voltage
53V
I
FM
, Forward Continuous Current
NOTE1
300mA
I
FSM
, Non-Repetitive Peak Forward Surge Current
@ t = 1.0μs
2.0A
@ t = 1.0s
1.0A
P
D
, Power Dissipation
NOTE1
350mW
R
θJA,
Thermal Resistance Junction to Ambient Air
NOTE1
357℃/W
T
J
, T
STG
, Operating and Storage Temperature Range
-65℃ ~ +150℃
Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at
these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
T
A
= 25℃, unless otherwise specified
Parameter
Symbol
Characteristic
Min
Max
Unit
Reverse Breakdown Voltage
NOTE2
V
(BR)
I
R
= 100μA
75
-
V
Forward Voltage
NOTE2
V
F
I
F
= 1.0mA
0.55
0.70
V
I
F
= 10mA
0.67
0.82
I
F
= 50mA
0.75
1.10
I
F
= 150mA
-
1.25
Reverse Current
I
R
V
R
= 50V
-
1.0
μA
V
R
= 100V
-
3.0
μA
V
R
= 50V, T
J
= 125°C
-
100
μA
V
R
= 20V
-
25
nA
Total Capacitance
C
T
V
R
= 0V, f = 1.0MHz
-
2.0
pF
Reverse Recovery Time
t
rr
I
F
= I
R
= 10mA
I
rr
= 0.1 x I
R
, R
L
= 100Ω
-
4.0
ns
NOTE1: Part mounted on FR-4 board with recommended pad layout.
NOTE2: Short duration test pulse used to minimize self-heating effect.