S9014W
1 / 4
©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD
E-mail:hkt@heketai.com
BIPOLAR TRANSISTOR (NPN)
FEATURES
Complementary to S9015W
High Current Gain
Surface Mount device
SOT-323
MECHANICAL DATA
Case: SOT-323
Case Material: Molded Plastic. UL flammability
Classification Rating: 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Weight: 0.008 grams (approximate)
MAXIMUM RATINGS (T
A
= 25°C unless otherwise noted)
Parameter
Value
Unit
Collector-Base Voltage
50
V
Collector-Emitter Voltage
45
V
Emitter-Base Voltage
5
V
Collector Current
100
mA
Collector Power Dissipation
200
mW
Thermal Resistance From Junction To Ambient
625
°C/W
Junction Temperature
150
°C
Storage Temperature
-55 ~+150
°C
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise specified)
Parameter
Symbol
Min
Typ
Max
Unit
Conditions
Collector-base breakdown voltage
V(BR)CBO
50
V
I
C
=100uA，I
E
=0
Collector-emitter breakdown voltage
V(BR)CEO
45
V
I
C
=100uA
，
I
B
=0
Emitter-base breakdown voltage
V(BR)EBO
5
V
I
E
=100uA
，
I
C
=0
Collector cut-off current
I
CBO
0.1
uA
V
CB
=50V, I
E
=0
Collector cut-off current
I
CEO
1
uA
V
CE
=35V, I
B
=0
Emitter cut-off current
I
EBO
0.1
uA
V
EB
=4V, I
C
=0
DC current gain
h
FE
200
1000
V
CE
=5V, I
C
=1mA
Collector-emitter saturation voltage
V
CE(sat)
0.3
V
I
C
=100mA，I
B
=5mA
Base-emitter saturation voltage
V
BE(sat)
1
V
I
C
=100mA
，
I
B
=5mA
Base-emitter voltage
V
BE
0.58
0.7
V
V
CE
=5V, I
C
=2mA
Transition frequency
f
T
150
MHz
V
CE
=5V, I
C
=10mA,f=30
MHz
Collector output capacitance
C
ob
3.5
pF
V
CB
=10V, I
E
=0, f=1
MHz
CLASSIFICATION OF h
FE
Rank
L
H
Range
200-450
450-1000
Marking
J6
S9014W
2
/ 4
©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt
@
heketai.com
BIPOLAR TRANSISTOR (NPN)
Typical Characteristics
0.1 1 10
0.1
1
10
100
0 25 50 75 100
125 150
0
50
100
150
200
250
0.0 0
.3 0.6 0.9 1.2
0.1
1
10
100
024
68
0
2
4
6
8
0.1 1 10 100
0.1
1
0.1 1 10 100
10
100
1000
0.1 1 10 100
0.01
0.1
1
0.1 1 10 100
1
10
100
1000
f=1M
Hz
I
E
=0/I
C
=0
T
a
=25
℃
V
CB
/ V
EB
C
ob
/ C
ib
—
—
C
ob
C
ib
CAPACIT
ANCE C (pF)
REVERSE VO
LTAGE V
R
(V)
P
C
—
— T
a
CO
LLECTOR POWER DISSIPATION
P
C
(mW)
AM
BIENT TEMPERATURE T
a
(
)
℃
COM
MON EMITTER
V
CE
= 5V
V
BE
I
C
—
—
T
a
=100
℃
T
a
=25
℃
COLLECTOR CURRENT I
C
(mA)
BASE-
EMMITER VOLTAGE V
BE
(V)
20uA
COMMON
EMITTER
T
a
=25
℃
18uA
16uA
14uA
12uA
10uA
8uA
6uA
4uA
I
B
=2uA
S
tatic Characteristic
COLLECTOR CURRENT I
C
(mA)
COLLECTOR-EM
ITTER VOLTAGE V
CE
(V)
20
f
T
—
—
h
FE
—
—
β=20
I
C
V
BEsat
—
—
T
a
=100
℃
T
a
=25
℃
BASE-
EMITTER SATURATION
VOLTAGE V
BEs
at
(V)
COLLECTOR CURRENT I
C
(m
A)
2
COM
MON EMITTER
V
CE
= 5V
I
C
I
C
T
a
=25
℃
T
a
=100
℃
DC CURRENT GAIN h
FE
COLLECTOR CURRENT I
C
(m
A)
β=20
T
a
=100
℃
T
a
=25
℃
I
C
V
CEsat
—
—
COLLECTOR-EMITTER SATURATION
VO
LTAGE V
CE
sat
(V)
COLLECTOR CURRENT I
C
(m
A)
COM
MON EMITTER
V
CE
=5V
T
a
=25℃
TRA
NSITION FREQUENCY f
T
(MHz
)
COLLECTOR CURRENT I
C
(m
A)