DATA SHEET
SEMICONDUCTOR
SB1020FCT THRU SB10200FCT
10A SCHOTTKY BARRIER RECTIFIER
FEATURES
• Schottky Barrier Chip
•Guard Ring for Transient Protection
•High Current Capability, Low Forward
•Low Reverse Leakage Current
•High Surge Current Capability
•Plasti
c Material has UL Flammability
Classification 94V-0
• High temperature soldering : 260
O
C / 10 seconds at terminals
• Pb free product at available : 99% Sn above meet RoHS
environment substance directive request
MECHANICAL DAT A
•Case: ITO-220AB Molded Plastic
•Terminals: Plated Leads Solderable per
MIL-STD-750, Method 2026
Polarity: As Marked on Body
Mounting Position: Any
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, hal
f wa
v
e, 60Hz, re
sisti
ve or inductive load.
For cap
a
ci
tiv
e
load, dera
te
curr
ent by
20%.
Characteristi
c
S
y
mb
o
l
S
B
1020FCT
SB
1030FCT
SB
1040FCT
SB
1050FCT
SB
1060FCT
SB
1080FCT
SB
10100FCT
SB
10150FCT
Units
Peak Repeti
tiv
e
R
eve
rse Volt
age
W
o
r
k
i
n
g
P
e
ak
Re
ve
r
s
e V
o
l
t
a
g
e
DC Bl
ocki
ng Vol
t
age
V
RRM
V
RWM
V
R
20
30
40
50
60
80
100
150
Volts
RMS
Re
ver
s
e V
o
ltag
e
V
R(RMS)
1
4
2
1
2
8
3
5
4
2
5
6
7
0
1
05
Volts
Average Rectified Output Current @TC =
95°C
I
F
10
Non-Repeti
tiv
e
Peak For
w
a
r
d
Su
r
g
e
Curr
e
nt
8.3ms Single ha
lf
sine-wav
e
super
i
mposed on r
a
ted l
o
ad
(J
EDEC
M
e
thod)
IF
SM
150
120
Am
ps
Forw
a
r
d
Vo
l
t
age
@
I
F
=
5
.
0
A
V
F
0
.
5
5
0
.
7
5
0.85
0.9
0
Volts
Peak Rev
e
rse
Current @T
A
= 25°C
At
Rated DC Blocking Volt
age @T
A
= 100°C
I
RM
0.5
50
7
T
y
pi
cal
Juncti
on
Capaci
tance (Note
1)
C
j
700
pF
Operati
ng and Stor
age Tempe
r
atur
e
Range
T
j
, T
STG
-55 to +150
℃
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
SB
10200FCT
200
140
0.95
A
0.1
m
ITO-220AB Unit:inch(mm)
H
http://www.yeashin.com
1
REV.06 20180717
.414(10.50)
.137(3.5)
.118(3.0)
.036(0.90)
.011(0.30)
.109(2.75)
.570(14.50)
.495(12.58)
.170(4.30)
.642(16.30)
.570(14.50)
.296(7.50)
.248(6.30)
.193(4.90)
.165(4.20)
.125(3.20)
.029(0.75)
.150(3.80)
.098(2.50)
.075(1.90)
.374(9.50)
.035(0.90)
.129(3.30)
.092(2.35)
.109(2.75)
.092(2.35)
.014(0.38)
.092(2.34)
.116(2.96)
.098(2.50)
Am
ps
SB1020FCT THRU SB10200FCT
DEVICE CHARACTERISTICS
Fig.2- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTIC
Fig.1- FORWARD CURRENT DERATING CURVE
CASE TEMPERATURE, C
O
Fig.3- TYPICAL REVERSE CHARACTERISTIC
0 100 200
300
100
10
1.0
0.1
0.01
T = 100 C
C
O
T=75C
C
O
T=25C
C
O
PEAK FORWARD SURGE CURRENT, A
Fig.4- MAXIMUM NON-REPETITIVE SURGE CURRENT
NO. OF CYCLE AT 60HZ
150
120
110
90
70
50
30
20
10
1 2 5 10 20 50 100
CAPACITANCE, pF
Fig.5- TYPICAL JUNCTION CAPACITANCE
REVERSE VOLTAGE, V
1 2 5 10 20 50 100
0
200 500
T = 25 C
J
O
8.3ms Single
Half Since-Wave
JEDEC Method
150-200V
20V-100V
AVERAGE FORWARD CURRENT, A
0
95
150
10.0
0
900
800
700
600
500
400
INSTANTANEOUS FORWARD CURRENT, A
INSTANTANEOUS FORWARD VOLTAGE, V
.4
.5 .6
.7
.8 .9 1.0
1.1
40
10
8
6
4
2
1.0
.8
.6
.4
.2
.1
T = 25 C
Pulse Width=300us
1% Duty Cycle
J
O
20,30,40V
50,60V
80,100V
150V
200V
INSTANTANEOUS REVERSE CURRENT, mA
PERCENT OF INSTANTANEOUS REVERSE VOLTAGE, %
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2
REV.06 20180717