DATA SHEET
SEMICONDUCTOR
MBR1020F THRU MBR10200F
Type Number
Symbol
MBR
1020F
MBR
1030F
MBR
1040F
MBR
1050F
MBR
1060F
MBR
1080F
MBR
10100F
Units
Maximum Recurrent Peak Reverse Voltage
V
RRM
20
30
40 50 60
80
100
V
Ma
xi
mum RMS Voltage
V
RMS
V
Maximum DC
B
locking
V
ol
t
age
V
DC
V
M
aximum Av
erage
Forward
Rec
tif
ied
Curren
t
See
Fig.
1
I
(AV)
10
A
Peak Repetitive Forward Current (Square Wave,
20KHz) at Tc=135
o
C
I
FRM
20.0
A
Peak F
orward Surge
Cur
r
en
t,
8.3 ms
Single
Hal
f
Sine-wave
Superim
posed
on
Rated Load
(JEDEC
me
thod
)
I
FSM
150
A
Peak Repetitive Reverse Surge Current (Note 1)
I
RRM
1
A
V
oltage Rate
of
Change (Rated
V
R
)
dV/dt
10,000
V/uS
Maximum Instantaneous Forward Voltage at
(Note 2) I
F
=10A, Tc=25
O
C
V
F
0.70 0.85
V
M
aximum
Instantaneous
Reverse
Current
@ Tc =25
at
Rated
DC
Blocki
ng Voltage
(Note
2)
@ Tc
=12
5
I
R
0.1
15.
0
0.
1
6.
0
0.02
5
10
mA
mA
Typical Junction Capacitance (Note 3)
Cj
35
0
pF
M
axi
mum
T
her
mal
R
esis
t
anc
e
, J
unctio
n
to
Cas
e
R
θ
JC
/W
O
perating
Junction Tem
perature
Range
T
J
-55
to +150
Storage Temperature Range
T
ST
G
-55 to +150
Notes:
1. 2.0us
Pulse Width,
f=1.0
KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Mounted on Heatsink Size of 2 in x 3 in x 0.25in Al-Plate.
MBR
10150F
MBR
10200F
20 30 40 50 60 80 100
14 21 28 35 42 56 70
15
0
105
15
0
200
140
200
0.5
0.55 0.75 0.95 0.99
28
0
200
3.
5
2.
0
10A SC
HOTTKY BA
RRI
ER RECTIFIER
FEATURES
Schottky Barrier Chip
Guard Ring for Transient Protection
High Current Capability, Low Forward
Low Reverse Leakage Current
High Surge Current Capability
Plastic Material has UL Flammability
Classification 94V-0
High temperature soldering : 260
O
C / 10 seconds at terminals
Pb free product at available : 99% Sn above meet RoHS
environment substance directive request
MECHANICAL DATA
Case:ITO-220AC Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-750, Method 2026
Polarity: As Marked on Body
Weight: 2.24 grams (approx.)
Mounting Position: Any
Marking: Type Number
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
ITO-220AC Unit:inch(mm)
•
•
•
•
•
•
•
•
•
•
•
•
•
•
.138(3.50)
http://www.yeashin.com
1
REV.03 20180717
H
MBR1020F THRU MBR10200F
DEVICE CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT
AMPERES
Fig.2- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTIC
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
AVERAGE FORWARD CURRENT
Fig.1- FORWARD CURRENT DERATING CURVE
CASE TEMPERATURE, C
O
0
150
10.0
.4
.5 .6
.7
.8 .9 1.0
1.1
40
10
8
6
4
2
1.0
.8
.6
.4
.2
.1
Fig.3- TYPICAL REVERSE CHARACTERISTIC
INSTANTANEOUS REVERSE CURRENT, MILAMPERES
0 100 200
300
100
10
1.0
0.1
0.01
T = 100 C
C
O
T=75C
C
O
T=25C
C
O
PEAK FORWARD SURGE CURRENT,
Fig.4- MAXIMUM NON-REPETITIVE SURGE CURRENT
NO. OF CYCLE AT 60HZ
150
120
110
90
70
50
30
20
10
1 2 5 10 20 50 100
CAPACITANCE, pF
Fig.5- TYPICAL JUNCTION CAPACITANCE
REVERSE VOLTAGE, VOLTS
1 2 5 10 20 50 100
400
350
300
250
200
150
0
200 500
T = 25 C
Pulse Width = 300 s
1% Duty Cycle
J
O
m
20,30V
40V
T = 25 C
J
O
8.3ms Single
Half Since-Wave
JEDEC Method
PERCENT OF PEAK REVERSE VOLTAGE
150V
50-100V
20-40V
150-200V
50,60V
80,100V
200V
http://www.yeashin.com
2
REV.03 20180717