SBESD15C-C
160W, 15V
Bi-Direction ESD Protection Diode
Elektronische Bauelemente
10-Apr-2020 Rev. A Page 1 of 3
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
L15
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
Designed to protect voltage sensitive electronic
components from ESD and other transients. Excellent
clamping capability, low leakage, low capacitance, and
fast response time provide best in class protection on
designs that are exposed to ESD.
The combination of small size, low capacitance, and
high level of ESD protection makes them a flexible solution
for applications such as HDMI, Display Port TM, and MDDI
interfaces. It is designed to replace multiplayer varistors (MLV)
in consumer equipments applications such as mobile phone,
notebook, PAD, STB, LCD TV etc.
FEATURES
Bi-directional ESD protection of one line
Reverse stand−off voltage: 15V
Low reverse clamping voltage
Low leakage current
Fast response time
JESD22-A114-B ESD Rating of class 3B per human body model
IEC 61000-4-2 Level 4 ESD protection
MARKING
PACKAGE INFORMATION
ORDER INFORMATION
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise noted.)
Parameter Symbol Ratings Unit
IEC 61000-4-2 ESD Voltage
1
Air
V
ESD
±25
kV
Contact ±25
JESD22-A114-B ESD Voltage
1
Per Human Body Model
±16
Machine Model ±0.4
Peak Pulse Power
2
@tp=8/20µs P
PP
160 W
Peak Pulse Current
2
@tp=8/20µs I
PP
4 A
Maximum Lead Solder Temperature(10 Second Duration) T
L
260 °C
Operating Junction and Storage Temperature Range T
J
, T
STG
150, -55~150 °C
Package MPQ Leader Size
DFN1006 10K 7 inch
Part Number Type
SBESD15C-C Lead (Pb)-free and Halogen-free
DFN1006
REF.
Millimeter
REF.
Millimeter
Min. Max.
Min. Max.
A 0.95 1.08 E 0.65BSC.
B 0.55 0.68 F 0.4 0.6
C 0.4 0.55 G 0.2 0.3
D 0.07 0.17 H 0.2 0.3
SBESD15C-C
160W, 15V
Bi-Direction ESD Protection Diode
Elektronische Bauelemente
10-Apr-2020 Rev. A Page 2 of 3
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted.)
Parameter Symbol Min. Typ. Max. Unit
Reverse Stand-Off Voltage V
RWM
- - 15 V
Reverse Breakdown Voltage @I
T
=1mA V
BR
16.8 - 20 V
Reverse Leakage Current @V
RWM
=15V I
R
- - 1 µA
Clamping Voltage
2
@I
PP
=4A V
C
- 35 40 V
Junction Capacitance @V
R
=0, f=1MHz C
J
- 15 20 pF
Notes:
1. Device stressed with ten non-repetitive ESD pulses.
2. Non-repetitive current pulse 8/20µs exponential decay waveform according to IEC61000-4-5.
ELECTRICAL PARAMETER
ESD STANDARDS COMPLIANCE