MMDT5551
Plastic-Encapsulate
Multi-Chip (NPN+NPN) Transistor
Elektronische Bauelemente
13-Apr-2020 Rev. A Page 1 of 3
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Complementary PNP Type Available (MMDT5401)
Epitaxial Planar Die Construction
Ideal for Medium Power Amplification and Switching
MARKING
PACKAGING DIMENSION
Package MPQ Leader Size
SOT-363 3K 7 inch
ORDER INFORMATION
EQUIVALENT CIRCUIT
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise specified)
Parameter Symbol Ratings
Unit
Collector-Base Voltage V
CBO
180
V Collector-Emitter Voltage V
CEO
160
Emitter-Base Voltage V
EBO
6
Collector Current-Continuous I
C
0.2 A
Collector Power Dissipation P
C
0.2 W
Junction & Storage Temperature T
J
, T
STG
150, -55~150 °C
REF.
Millimeter
REF.
Millimeter
Min.
Max.
Min.
Max.
A
1.80
2.20
G
0.100 REF.
B
1.80
2.45
H
0.525 REF.
C
1.15
1.35
J
0.08
0.25
D 0.80 1.10
K 8°
E 1.10 1.50
L 0.650 TYP.
F 0.10 0.35
Part Number Type
MMDT5551 Lead (Pb)-free
MMDT5551-C Lead (Pb)-free and Halogen-free
K4N
SOT-363
B
L
F
HC
J
D G
K
A
E
․
․․
․=PIN 1
MMDT5551
Plastic-Encapsulate
Multi-Chip (NPN+NPN) Transistor
Elektronische Bauelemente
13-Apr-2020 Rev. A Page 2 of 3
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise specified)
Parameter Symbol Min. Typ. Max. Unit Test Conditions
Collector-Base Breakdown Voltage V
(BR)CBO
180 - - V I
C
=100µA, I
E
=0
Collector-Emitter Breakdown Voltage V
(BR)CEO
160 - - V I
C
=1mA, I
B
=0
Emitter-Base Breakdown Voltage V
(BR)EBO
6 - - V I
E
=10µA, I
C
=0
Collector Cut-off Current I
CBO
- - 0.05 µA V
CB
=120V, I
E
=0
Emitter Cut-off Current I
EBO
- - 0.05 µA V
EB
=4V, I
C
=0
DC Current Gain h
FE
80 - -
V
CE
=5V, I
C
=1mA
100 - 300 V
CE
=5V, I
C
=10mA
30 - - V
CE
=5V, I
C
=50mA
Collector-Emitter Saturation Voltage V
CE(sat)
- - 0.15
V
I
C
=10mA, I
B
=1mA
- - 0.2 I
C
=50mA, I
B
=5mA
Base-Emitter Saturation Voltage V
BE(sat)
- - 1
V
I
C
=10mA, I
B
=1mA
- - 1 I
C
=50mA, I
B
=5mA
Transition Frequency f
T
100 - 300 MHz
V
CE
=10V, I
C
=10mA,
f=100MHz
Output Capacitance C
OB
- - 6 pF V
CB
=10V, I
E
=0, f=1MHz
Noise Figure NF - - 8 dB
V
CE
=5V, I
C
=0.2mA,
R
S
=1kΩ, f=1kHz