V
RM
= 200 V, I
F(AV)
= 0.8 A, t
rr
= 400 ns
Fast Recovery Diode
AU02Z Data Sheet
AU02Z-DSE Rev.1.2 SANK EN EL ECTRIC CO., LTD. 1
Dec. 10, 2019 https://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2018
Description
The AU02Z is a fast recovery diod e of 200 V / 0.8 A.
The maximum t
rr
of 400 ns is realized by optimizing a
life-time contro l.
Features
● V
RM
------------------------------------------------------ 200 V
● I
F(AV)
------------------------------------------------------ 0.8 A
● V
F
--------------------------------------------------------- 1.3 V
● t
rr1
-------------------------------------------------------- 400 ns
● Bare Leads: Pb-free (RoHS Compliant)
● Flammability: Equivalent to U L94V-0
Applications
● Secondary-side Rectifier Dio de
(Flyback Converter, LLC Converter, etc.)
● Freewheel Diode
(Off l ine Buck Converter, Offline Buck-boost
Converter, etc.)
Package
Axial (φ2.4 × 2.9L / φ0.57)
(1)
(2)
(1) Cathode
(2
) A
node
Not to scale
Cathode Mark
(1)
(2)
AU02Z
AU02Z-DSE Rev.1.2 SANK EN EL ECTRIC CO., LTD. 2
Dec. 10, 2019 https://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2018
Absolute Maximum Ratings
Unless otherwise specified, T
A
= 25 °C.
Parameter Symbol Conditions Rating Unit
Nonrepetitive Peak Reverse Voltage V
RSM
250 V
Repetitive Peak Reverse Volta ge V
RM
200 V
Average Forward Current I
F(AV)
See Figure 2 and Figure 3 0.8 A
Surge Forward Cur rent I
FSM
Half cycle sine wave,
positive side, 10 ms, 1 shot
25 A
I
2
t Limiting Value I
2
t 1 ms ≤ t ≤ 10 ms 3.13 A
2
s
Junct ion Tempera t ure T
J
−40 to 150 °C
Storage Temperature T
STG
−40 to 150 °C
Electrical Characteristics
Unless otherwise specified, T
A
= 25 °C.
Parameter Symbol Conditions Min. Typ. Max. Unit
Forward Voltage Drop V
F
T
J
= 25 °C, I
F
= 0.8 A — — 1.3 V
T
J
= 100 °C, I
F
= 0.8 A — 0.8 — V
Reverse Leakage Current I
R
V
R
= V
RM
— — 10 µA
Reverse Leakage Current
under High Temperature
H∙I
R
V
R
= V
RM
, T
J
= 100 °C — — 250 µA
Reverse Recovery Time
t
rr1
I
F
= I
RP
= 10 mA,
90% recovery point,
T
J
= 25 °C
— — 400 ns
t
rr2
I
F
= 10 mA,
I
RP
= 20 mA,
75% recovery point,
T
J
= 25 °C
— — 180 ns
Thermal Resistance
(1)
R
th(J-L)
See Figure 1 — — 22 °C/W
Device
Di ameter of solder ing area : φ3 mm
Cupper thickness: 50 µm
T
L
1.6 mm
5 mm
Figure 1. Lead Temperature Measurement Conditions
(1)
R
th (J-L)
is thermal resistance between junction and lead.