MMDT5551
DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Complementary PNP Type Available (MMDT5401)
• Ideal for Medium Power Amplification and Switching
• Ultra-Small Surface Mount Package
• Lead Free/RoHS Compliant (Note 3)
• "Green" Device (Note 4 and 5)
Mechanical Data
• Case: SOT-363
• Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
• Terminal Connections: See Diagram
• Marking Information: K4N, See Page 3
• Ordering & Date Code Information: See Page 3
• Weight: 0.006 grams (approximate)
SOT-363
Dim Min Max
A 0.10 0.30
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
F 0.30 0.40
H 1.80 2.20
J — 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.25
α
0° 8°
All Dimens mm ions in
A
M
J
L
D
B
C
H
K
G
F
C
1
B
2
E
2
E
1
B
1
C
2
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage
V
CBO
180 V
Collector-Emitter Voltage
V
CEO
160 V
Emitter-Base Voltage
V
EBO
6.0 V
Collector Current - Continuous (Note 1)
I
C
200 mA
Power Dissipation (Note 1, 2)
P
d
200 mW
Thermal Resistance, Junction to Ambient (Note 1)
R
θ
JA
625
°C/W
Operating and Storage Temperature Range
T
j
, T
STG
-55 to +150
°C
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Maximum combined dissipation.
3. No purposefully added lead.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30172 Rev. 8 - 2
1 of 4
www.diodes.com
MMDT5551
© Diodes Incorporated
Electrical Characteristics @T
A
= 25°C unless otherwise specified
DS30172 Rev. 8 - 2
2 of 4
www.diodes.com
MMDT5551
© Diodes Incorporated
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Collector-Base Breakdown Voltage
V
(BR)CBO
180
⎯
V
I
C
= 100μA, I
E
= 0
Collector-Emitter Breakdown Voltage
V
(BR)CEO
160
⎯
V
I
C
= 1.0mA, I
B
= 0
Emitter-Base Breakdown Voltage
V
(BR)EBO
6.0
⎯
V
I
E
= 10μA, I
C
= 0
Collector Cutoff Current
I
CBO
⎯
50
nA
μA
V
CB
= 120V, I
E
= 0
V
CB
= 120V, I
E
= 0, T
A
= 100°C
Emitter Cutoff Current
I
EBO
⎯
50 nA
V
EB
= 4.0V, I
C
= 0
ON CHARACTERISTICS (Note 6)
DC Current Gain
h
FE
80
80
30
⎯
250
⎯
⎯
I
C
= 1.0mA, V
CE
= 5.0V
I
C
= 10mA, V
CE
= 5.0V
I
C
= 50mA, V
CE
= 5.0V
Collector-Emitter Saturation Voltage
V
CE(SAT)
⎯
0.15
0.20
V
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
Base-Emitter Saturation Voltage
V
BE(SAT)
⎯
1.0 V
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
⎯
6.0 pF
V
CB
= 10V, f = 1.0MHz, I
E
= 0
Small Signal Current Gain
h
fe
50 250
⎯
V
CE
= 10V, I
C
= 1.0mA, f = 1.0kHz
Current Gain-Bandwidth Product
f
T
100 300 MHz
V
CE
= 10V, I
C
= 10mA, f = 100MHz
Noise Figure NF
⎯
8.0 dB
V
CE
= 5.0V, I
C
= 200μA,
R
S
= 1.0kΩ,
f = 1.0kHz
Notes: 6. Short duration pulse test used to minimize self-heating effect.
0.04
0.05
0.06
0.07
0.08
0.09
0.15
0.14
0.13
0.12
0.11
0.10
1
10 100
1,000
V,
C
O
LLE
C
T
O
R
T
O
EMI
T
T
E
R
SATURATION VOLTAGE (V)
CE(SAT)
I , COLLECTOR CURRENT (mA)
Fig. 2, Collector Emitter Saturation Voltage
vs. Collector Current
C
I
I
C
B
= 10
T = 150°C
A
T = 25°C
A
T = -50°C
A
0
50
25 50
75
100 125
150
175
200
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N (mW)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs.
Ambient Temperature
A
100
150
200
0