MMDT5401Q
Document Number: DS39993 Rev: 3 - 2
1 of 5
www.diodes.com
September 2018
© Diodes Incorporated
MMDT5401Q
150V DUAL PNP SMALL SIGNAL TRANSISTOR IN SOT363
Description
This Bipolar Junction Transistor (BJT) is designed to meet the
stringent requirements of Automotive Applications.
Features
Epitaxial Planar Die Construction
Complementary NPN Type Available (MMDT5551Q)
Ideal for Medium Power Amplification and Switching
Ultra-Small Surface Mount Package
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Case: SOT363
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin Finish. Solderable per MIL-STD-
202, Method 208
Weight: 0.006 grams (Approximate)
Ordering Information (Note 5)
Part Number
Compliance
Marking
Reel Size (inches)
Tape Width (mm)
Quantity per Reel
MMDT5401Q-7-F
Automotive
K4M
7
8
3,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to https://www.diodes.com/quality/.
5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
Date Code Key
Year
2017
2018
2019
2020
2021
2022
2023
2024
2025
Code
E
F
G
H
I
J
K
L
M
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
Top View
Device Symbol
SOT363
Top View
Pin-Out
C2
E2
B2
C1
E1
B1
K4M = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: F = 2018)
M = Month (ex: 9 = September)
K4M YM
K4M YM
e3
SOT363
MMDT5401Q
Document Number: DS39993 Rev: 3 - 2
2 of 5
www.diodes.com
September 2018
© Diodes Incorporated
MMDT5401Q
Absolute Maximum Ratings
(
@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
-160
V
Collector-Emitter Voltage
V
CEO
-150
V
Emitter-Base Voltage
V
EBO
-6
V
Continuous Collector Current
I
C
-200
mA
Thermal Characteristics
(
@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation
(Note 6)
P
D
200
mW
(Notes 7 & 8)
320
Thermal Resistance, Junction to Ambient
(Note 6)
R
θJA
625
°C/W
(Notes 7 & 8)
390
Thermal Resistance, Junction to Case
(Note 9)
R
θJC
140
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150
°C
Electrical Characteristics
(
@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BV
CBO
-160
V
I
C
= -100µA, I
E
= 0
Collector-Emitter Breakdown Voltage (Note 10)
BV
CEO
-150
V
I
C
= -1mA, I
B
= 0
Emitter-Base Breakdown Voltage
BV
EBO
-6
V
I
E
= -100µA, I
C
= 0
Collector-Base Cutoff Current
I
CBO
-50
nA
V
CB
= -120V, I
E
= 0
-50
µA
V
CB
= -120V, I
E
= 0, T
A
= +100°C
Base-Emitter Cutoff Current
I
EBO
-50
nA
V
EB
= -5V, I
C
= 0
ON CHARACTERISTICS (Note 10)
DC Current Gain
h
FE
50
I
C
= -1.0mA, V
CE
= -5.0V
60
240
I
C
= -10mA, V
CE
= -5.0V
50
I
C
= -50mA, V
CE
= -5.0V
Collector-Emitter Saturation Voltage
V
CE(SAT)
-0.2
V
I
C
= -10mA, I
B
= -1.0mA
-0.5
I
C
= -50mA, I
B
= -5.0mA
Base-Emitter Saturation Voltage
V
BE(SAT)
-1.0
V
I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
6.0
pF
V
CB
= -10V, f = 1.0MHz, I
E
= 0
Small Signal Current Gain
h
fe
40
260
I
C
= -1mA, V
CE
= -10V, f = 1.0MHz
Current Gain-Bandwidth Product
f
T
100
300
MHz
I
C
= -10mA, V
CE
= -10V, f = 100MHz
Noise Figure
NF
8.0
dB
V
CE
= -5.0V, I
C
= -200µA,
R
S
= 10Ω
f = 1.0kHz
Notes: 6. For a device mounted on minimum recommended pad layout 1oz weight copper that is on a single-sided FR-4 PCB; device is measured under still air
conditions whilst operating in a steady-state.
7. Same as Note 6, except the device is mounted on 25mm x 25mm 2oz copper.
8. Maximum combined dissipation.
9. Thermal resistance from junction to the top of package.
10. Measured under pulsed conditions. Pulse width 300µs. Duty cycle 2%.