MMDT5401
Document Number: DS30169 Rev: 11 - 2
1 of 5
www.diodes.com
September 2018
© Diodes Incorporated
MMDT5401
150V DUAL PNP SMALL SIGNAL TRANSISTOR IN SOT363
Features
Epitaxial Planar Die Construction
Complementary NPN Type Available (MMDT5551)
Ideal for Medium Power Amplification and Switching
Ultra-Small Surface Mount Package
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
An Automotive-Compliant Part is Available Under Separate
Datasheet (MMDT5401Q)
Mechanical Data
Case: SOT363
Case Material: Molded Plastic, “Green” Molding Compound,
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin Finish. Solderable per MIL-STD-
202, Method 208
Weight: 0.006 grams (Approximate)
Ordering Information (Note 4)
Part Number
Marking
Reel Size (inches)
Tape Width (mm)
Quantity Per Reel
MMDT5401-7-F
K4M
7
8
3,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
Date Code Key
2017
2018
2019
2020
2021
2022
2023
2024
2025
E
F
G
H
I
J
K
L
M
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
1
2
3
4
5
6
7
8
9
O
N
D
Top View
Device Symbol
SOT363
Top View
Pin-Out
C2
E2
B2
C1
E1
B1
K4M = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: F = 2018)
M = Month (ex: 9 = September)
K4M YM
K4M YM
e3
MMDT5401
Document Number: DS30169 Rev: 11 - 2
2 of 5
www.diodes.com
September 2018
© Diodes Incorporated
MMDT5401
Absolute Maximum Ratings
(
@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
-160
V
Collector-Emitter Voltage
V
CEO
-150
V
Emitter-Base Voltage
V
EBO
-6
V
Continuous Collector Current
I
C
-200
mA
Thermal Characteristics
(
@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation
(Note 5)
P
D
200
mW
(Notes 6 & 7)
320
Thermal Resistance, Junction to Ambient
(Note 5)
R
θJA
625
°C/W
(Notes 6 & 7)
390
Thermal Resistance, Junction to Case
(Note 8)
R
θJC
140
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150
°C
Electrical Characteristics
(
@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BV
CBO
-160
V
I
C
= -100µA, I
E
= 0
Collector-Emitter Breakdown Voltage (Note 9)
BV
CEO
-150
V
I
C
= -1mA, I
B
= 0
Emitter-Base Breakdown Voltage
BV
EBO
-6
V
I
E
= -100µA, I
C
= 0
Collector-Base Cutoff Current
I
CBO
-50
nA
V
CB
= -120V, I
E
= 0
-50
µA
V
CB
= -120V, I
E
= 0, T
A
= +100°C
Base-Emitter Cutoff Current
I
EBO
��
-50
nA
V
EB
= -5V, I
C
= 0
ON CHARACTERISTICS (Note 9)
DC Current Gain
h
FE
50

I
C
= -1.0mA, V
CE
= -5.0V
60
240
I
C
= -10mA, V
CE
= -5.0V
50
I
C
= -50mA, V
CE
= -5.0V
Collector-Emitter Saturation Voltage
V
CE(SAT)


-0.2
V
I
C
= -10mA, I
B
= -1.0mA
-0.5
I
C
= -50mA, I
B
= -5.0mA
Base-Emitter Saturation Voltage
V
BE(SAT)


-1.0
V
I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo

6.0
pF
V
CB
= -10V, f = 1.0MHz, I
E
= 0
Small Signal Current Gain
h
fe
40
260
I
C
= -1mA, V
CE
= -10V, f = 1.0MHz
Current Gain-Bandwidth Product
f
T
100
300
MHz
I
C
= -10mA, V
CE
= -10V, f = 100MHz
Noise Figure
NF
��
8.0
dB
V
CE
= -5.0V, I
C
= -200µA,
R
S
= 10Ω
f = 1.0kHz
Notes: 5. For a device mounted on minimum recommended pad layout 1oz weight copper that is on a single-sided FR-4 PCB; device is measured under still air
conditions whilst operating in a steady-state.
6. Same as Note 5, except the device is mounted 25mm X 25mm 2oz copper.
7. Maximum combined dissipation.
8. Thermal resistance from junction to the top of package.
9. Measured under pulsed conditions. Pulse width 300µs. Duty cycle 2%.