MMDT3904
Document number: DS30088 Rev. 18 - 2
1 of 6
www.diodes.com
April 2016
© Diodes Incorporated
MMDT3904
40V DUAL NPN SMALL SIGNAL TRANSISTOR IN SOT363
Features
Epitaxial Planar Die Construction
Ideal for Medium Power Amplification and Switching
Ultra-Small Surface Mount Package
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT363
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Finish; Solderable per MIL-STD-
202, Method 208
Weight: 0.006 grams (Approximate)
Ordering Information (Note 4)
Product
Status
Marking
Reel size (inches)
Tape width (mm)
Quantity per reel
MMDT3904-7-F
Active
K6N
7
8
3,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year
2015
2016
2017
2018
2019
2020
2021
2022
Code
C
D
E
F
G
H
I
J
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
Top View
SOT363
Device Schematic
Top View
K6N = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: D = 2016)
M or M = Month (ex: 9 = September)
SOT363
MMDT3904
Document number: DS30088 Rev. 18 - 2
2 of 6
www.diodes.com
April 2016
© Diodes Incorporated
MMDT3904
Absolute Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
60
V
Collector-Emitter Voltage
V
CEO
40
V
Emitter-Base Voltage
V
EBO
6.0
V
Collector Current
I
C
200
mA
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 5)
P
D
200
mW
Thermal Resistance, Junction to Ambient (Note 5)
R
θJA
625
°C/W
Operating and Storage and Temperature Range
T
J
, T
STG
-55 to +150
°C
ESD Ratings (Note 6)
Characteristic
Symbol
Value
Unit
JEDEC Class
Electrostatic Discharge - Human Body Model
ESD HBM
4,000
V
3A
Electrostatic Discharge - Machine Model
ESD MM
400
V
C
Notes: 5. For the device mounted on minimum recommended pad layout FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device
is measured when operating in a steady-state condition.
6. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
Thermal Characteristic and Derating Information
0
50
25 50
75
100 125
150
175
200
P , POWER DISSIPATION (mW)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 1, Power Dissipation vs.
Ambient Temperature (Total Device)
A
100
150
200
0