MMDT2222A
Document number: DS30125 Rev. 14 - 2
1 of 6
www.diodes.com
April 2016
© Diodes Incorporated
MMDT2222A
40V DUAL NPN SMALL SIGNAL TRANSISTOR IN SOT363
Features
BV
CEO
> 40V
Epitaxial Pl anar Die Const ruction
Ideal for Medium Power Amplification and Switching
Ultra-Sm al l Surfac e Mount Package
Complementary P NP Type: MMDT2907A
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimon y Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT363
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammabilit y Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin Finish. S olderable per MIL-STD-
202, Method 208
Weight: 0.006 grams (Approximate)
Ordering Information (Note 4)
Product
Status
Compliance
Reel Size (inches)
Tape Width (mm)
Quantity Per Reel
MMDT2222A-7-F
Active
AEC-Q101
7
8
3,000
Notes: 1. No purposely added lead. Fully EU Directiv e 2002/95/EC (Ro H S) & 20 11/ 6 5/E U (R oHS 2) com pli a nt.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead -free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year
2013
2014
2015
2016
2017
2018
2019
2020
Code
A
B
C
D
E
F
G
H
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8 9 O N D
Top View
SOT363
e3
Device Schematic
Top View
K1P = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex:
D = 2016)
M or M = Month (ex: 9 = September)
K1P YM
K1P YM
SOT363
MMDT2222A
Document number: DS30125 Rev. 14 - 2
2 of 6
www.diodes.com
April 2016
© Diodes Incorporated
MMDT2222A
Absolute Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
75
V
Collector-Emitter Voltage
V
CEO
40
V
Emitter-Base Voltage
V
EBO
6.0
V
Continuous Collector Current
I
C
600
mA
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 5 )
P
D
200
mW
Thermal Resistance, Junction to Ambient (Note 5)
R
θJA
625
°C/W
Operating and Storage T em perature Range
T
J
, T
STG
-55 to +150
°C
ESD Rating s (Note 6)
Characteristic
Symbol
Value
Unit
JEDEC Cl a ss
Electrostat ic Discharge - Human Body Model ESD HBM ≥ 4,000 V 3A
Electrostat ic Discharge - Machine Model ESD MM ≥ 400 V C
Notes: 5. For the device mounted on minimum recommended pad layout FR-4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device
is measured when operating in a steady-state condition.
6. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
Thermal Characteristic and Derating Information