Surface Mount NPN General Purpose
Transistor
2N2222AUA (TX, TXV)
© TT electronics plc
General Note
TT Electronics reserves the right to make changes in product specicaon without
noce or liability. All informaon is subject to TT Electronics’ own data and is
considered accurate at me of going to print.
TT Electronics | OPTEK Technology
2900 E. Plano Pkwy, Plano, TX 75074 | Ph: +1 972 323 2200
www.electronics.com | sensors@electronics.com
Rev - 06/2019 Page 1
Descripon:
The 2N2222AUA (TX, TXV) is a hermecally sealed ceramic surface mount general purpose switching transistor. The four pin
ceramic package is ideal for designs where board space and device weight are important design consideraons. The “UA”
sux denotes the 4 terminal leadless chip carrier package, type “A” per MIL-PRF-19500/255.
Typical screening per MIL-PRF-19500/255. The burn-in condion is V
CB
= 30 V. P
D
= 400 mW, T
A
= 25°C, t = 80 hrs. Refer to
MIL-PRF-19500/255 for complete requirements. In addion, the TX and TXV versions receive 100% thermal response
tesng.
When ordering parts without processing, do not use the TX or TXV sux.
Applicaons:
• General switching
• Amplicaon
• Signal processing
• Radio transmission
• Logic gates
Features:
• Ceramic 4 pin surface mount package
• Small package to minimize circuit board area
• Hermecally sealed
• Processed per MIL-PRF-19500/255
Surface Mount NPN General Purpose
Transistor
2N2222AUA (TX, TXV)
© TT electronics plc
General Note
TT Electronics reserves the right to make changes in product specicaon without
noce or liability. All informaon is subject to TT Electronics’ own data and is
considered accurate at me of going to print.
TT Electronics | OPTEK Technology
2900 E. Plano Pkwy, Plano, TX 75074 | Ph: +1 972 323 2200
www.electronics.com | sensors@electronics.com
Rev - 06/2019 Page 2
Absolute Maximum Rangs (T
A
= 25° C unless otherwise noted)
Collector-Base Voltage 75V
Collector-Emier Voltage 50V
Emier-Base Voltage 6.0V
Collector Current-Connuous 800mA
Operang Juncon Temperature (T
J
) -65° C to +200 °C
Storage Juncon Temperature (T
stg
) -65° C to +200° C
Power Dissipaon @ T
A
= 25°C 0.5 W
Power Dissipaon @ Tc = 25° C 1.16 W
(1)
Soldering Temperature (vapor phase reow for 30 seconds) 215° C
Soldering Temperature (heated collet for 5 seconds) 260° C
Electrical Specicaons
Electrical Characteriscs (T
A
= 25° C unless otherwise noted)
SYMBOL PARAMETER MIN MAX UNITS TEST CONDITIONS
OFF CHARACTERISTICS
V
(BR)CBO
Collector-Base Breakdown Voltage 75 V I
C
= 10 µA, I
E
= 0
V
(BR)CEO
Collector-Emier Breakdown Voltage 50 V I
C
= 10 mA, I
B
= 0
V
(BR)EBO
Emier-Base Breakdown Voltage 6.0 V I
E
= 10 µA, I
C
= 0
I
CBO
Collector-Base Cuto Current
10 nA V
CB
= 60 V, I
E
= 0
10 µA V
CB
= 60 V, I
E
= 0, T
A
= 150° C
I
EBO
Emier-Base Cuto Current 10 nA V
EB
= 4 V, I
C
= 0
I
CES
Collector Emier Cuto Current 50 nA V
CE
= 50 V
ON CHARACTERISTICS
h
FE
50 - V
CE
= 10 V, I
C
= 0.1 mA
Forward-Current Transfer Rao
75 325 - V
CE
= 10 V, I
C
= 1.0 mA
100 - V
CE
= 10 V, I
C
= 10 mA
100 300 - V
CE
= 10 V, I
C
= 150 mA
(2)
30 - V
CE
= 10 V, I
C
= 500 mA
(2)
35 - V
CE
= 10 V, I
C
= 10 mA, T
A
= -55°C
Note:
1. Derate linearly 6.6 mW/°C above 25° C
2. Pulse Width ≤300 µs, Duty Cycle ≤ 2.0%