MMDT3904VC
40V DUAL NPN SMALL SIGNAL TRANSISTOR IN SOT563
Features
• BV
CEO
> 4 0V
• I
C
= 200mA High Collector Current
• Epitaxial Pl anar Die Const ruction
• Ideal for Medium Power Amplification and Switching
• Ultra-Sm al l Surfac e Mount Package
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliabili ty
Mechanical Data
• Case: SOT563
• Case Material: Molded Plastic, “Green” Molding Com pound;
UL Flammabilit y Classification Rating 94V-0
• Moisture Sensitivi t y: Level 1 per J-STD-020
• Terminals: Finish—Matte Tin Finish; Solderable per MIL-STD-
202, Method 208
• Weight: 0.003 grams (Approximate)
Ordering Information (Note 4)
Part Number
Status
Compliance
Marking
Reel Size (inches)
Tape Width (mm)
Quantity Per Reel
MMDT3904VC-7
Active
AEC-Q101
APK
7
8
3000
Notes: 1. No purposely added lead. Fully EU Direc tive 2002/95/EC (R o HS ), 20 11/ 65/ E U (RoHS 2) & 2015/ 8 63/EU (Ro H S 3) com plia nt.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details , go to our webs ite at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year
2018
2019
2020
2021
2022
2023
2024
Code
F
G
H
I
J
K
L
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
e3
Top View
SOT563
Device Schematic
Top View
APK = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex:
F = 2018)
M or M = Month (ex: 9 = September)
SOT563
APK YM
Bottom View
MMDT3904VC
Document number: DS30636 Rev. 5 - 2
1 of 7
www.diodes.com
September 2018
© Diodes Incorporated
MMDT3904VC
Absolute Maxi m um Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
60
V
Collector-Emitter Voltage
V
CEO
40
V
Emitter-Base Voltage
V
EBO
6.0
V
Collect or Current
I
C
200
mA
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Power Dissipation (Not e 5)
P
D
150
mW
Thermal Resistance, Junction to Ambient (Note 5)
R
��JA
833
°C/W
Operating and Storage and Temperature Range
T
J
, T
STG
-55 to +150
°C
ESD Rating s (Note 6)
Characteristic
Symbol
Value
Unit
JEDEC Cl a ss
Electrostat ic Discharge—Human Body Model ESD HBM 4000 V 3A
Electrostat ic Discharge—Machine Model
ESD MM
400
V
C
Notes: 5. For the device mounted on minimum recommended pad layout FR-4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device
is measured wh en op er ating in a steady-state condition.
6. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
MMDT3904VC
Document number: DS30636 Rev. 5 - 2
2 of 7
www.diodes.com
September 2018
© Diodes Incorporated