Ref. : DSCHA6653-QXG7103 - 13 Apr 17
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com
27- 33.5GHz Power Amplifier
GaAs Monolithic Microwave IC in SMD leadless package
36 lead 6x5 mm QFN package
The CHA6653-QXG is a four stage
monolithic GaAs high power circuit producing
1.8 Watt output power. It is highly linear, with
possible gain control and integrates a power
detector. ESD protections are included.
It is designed for Point To Point Radio.
The circuit is manufactured with a pHEMT
process, 0.15µm gate length.
It is supplied in RoHS compliant SMD
package.
Output power vs frequency
■ Broadband performances: 27- 33.5GHz
■ 32.5dBm saturated power
■ 38dBm OIP3
■ 20dB gain
■ DC bias: Vd = 6.0Volt @ Id = 0.9A
■ QFN 6x5
■ MSL3
Main Electrical Characteristics
15
17
19
21
23
25
27
29
31
33
35
26 27 28 29 30 31 32 33 34 35
Output power (dBm) & PAE (%)