VS-STPS30L60CW-N3
www.vishay.com
Vishay Semiconductors
Revision: 04-Jan-18
1
Document Number: 96470
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Performance Schottky Rectifier, 2 x 15 A
FEATURES
150 °C T
J
operation
Very low forward voltage drop
High frequency operation
High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
Guard ring for enhanced ruggedness and long term
reliability
Designed and qualified according to JEDEC
®
-JESD 47
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-STPS30L60CW... center tap Schottky rectifier has
been optimized for very low forward voltage drop, with
moderate leakage. The proprietary barrier technology allows
for reliable operation up to 150 °C junction temperature.
Typical applications are in switching power supplies,
converters, freewheeling diodes, and reverse battery
protection.
PRIMARY CHARACTERISTICS
I
F(AV)
2 x 15 A
V
R
60 V
V
F
at I
F
0.56 V
I
RM
max. 100 mA at 125 °C
T
J
max. 150 °C
E
AS
13 mJ
Package TO-247AC 3L
Circuit configuration Common cathode
Base
common
cathode
Common
cathode
2
2
13
Anode Anode
TO-247AC 3L
1
3
2
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 30 A
V
RRM
60 V
I
FSM
t
p
= 5 μs sine 1020 A
V
F
15 A
pk
, T
J
= 125 °C (per leg) 0.56 V
T
J
-55 to +150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-STPS30L60CW-N3 UNITS
Maximum DC reverse voltage V
R
60 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5
I
F(AV)
50 % duty cycle at T
C
= 112 °C, rectangular waveform 30
A
Maximum peak one cycle
non-repetitive surge current per leg
See fig. 7
I
FSM
5 μs sine or 3 μs rect. pulse
Following any rated load
condition and with rated
V
RRM
applied
1020
10 ms sine or 6 ms rect. pulse 265
Non-repetitive avalanche energy per leg E
AS
T
J
= 25 °C, I
AS
= 1.50 A, L = 11.5 mH 13 mJ
Repetitive avalanche current per leg I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
1.50 A
VS-STPS30L60CW-N3
www.vishay.com
Vishay Semiconductors
Revision: 04-Jan-18
2
Document Number: 96470
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop per leg
See fig. 1
V
FM
(1)
15 A
T
J
= 25 °C
0.60
V
30 A 0.80
15 A
T
J
= 125 °C
0.56
30 A 0.70
Maximum reverse leakage current per leg
See fig. 2
I
RM
(1)
T
J
= 25 °C
V
R
= Rated V
R
0.48
mA
T
J
= 125 °C
50 (typical)
100
Maximum junction capacitance per leg C
T
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C 720 pF
Typical series inductance per leg L
S
Measured lead to lead 5 mm from package body 7.5 nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
-55 to 150 °C
Maximum thermal resistance,
junction to case per leg
R
thJC
DC operation
See fig. 4
2.20
°C/W
Maximum thermal resistance,
junction to case per package
DC operation 1.10
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth and greased 0.24
Approximate weight
6g
0.21 oz.
Mounting torque
minimum
Non-lubricated threads
6 (5)
kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style TO-247AC 3L STPS30L60CW