VS-63CTQ100-M3
www.vishay.com
Vishay Semiconductors
Revision: 15-Aug-17
1
Document Number: 96256
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Performance Schottky Rectifier, 2 x 30 A
FEATURES
• 175 °C T
J
operation
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Designed and qualified according to JEDEC
®
-JESD 47
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
This center tap Schottky rectifier has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
PRIMARY CHARACTERISTICS
I
F(AV)
2 x 30 A
V
R
100 V
V
F
at I
F
0.69 V
I
RM
max. 20 mA at 125 °C
T
J
max. 175 °C
E
AS
11.25 mJ
Package 3L TO-220AB
Circuit configuration Common cathode
Anode
13
2
Base
common
cathode
2
Common
cathode
Anode
3L TO-220AB
1
2
3
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform (per device) 60 A
V
RRM
100 V
I
FRM
T
C
= 139 °C (per leg) 60
A
I
FSM
t
p
= 5 μs sine 1500
V
F
30 A
pk
, T
J
= 125 °C 0.69 V
T
J
Range -65 to +175 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-63CTQ100-M3 UNITS
Maximum DC reverse voltage V
R
100 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward
current
per leg
I
F(AV)
50 % duty cycle at T
C
= 139 °C, rectangular waveform
30
A
per device 60
Peak repetitive forward current per leg I
FRM
Rated V
R
, square wave, 20 kHz, T
C
= 140 °C 60
Maximum peak one cycle non-repetitive
surge current per leg
I
FSM
5 µs sine or 3 µs rect. pulse
Following any rated load
condition and with rated
V
RRM
applied
1500
10 ms sine or 6 ms rect. pulse 300
Non-repetitive avalanche energy per leg E
AS
T
J
= 25 °C, I
AS
= 0.75 A, L = 40 mH 11.25 mJ
Repetitive avalanche current per leg I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
0.75 A
VS-63CTQ100-M3
www.vishay.com
Vishay Semiconductors
Revision: 15-Aug-17
2
Document Number: 96256
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS
Maximum forward voltage drop V
FM
(1)
30 A
T
J
= 25 °C
0.78 0.82
V
60 A 0.94 1.0
30 A
T
J
= 125 °C
0.64 0.69
60 A 0.78 0.83
Maximum instantaneous reverse current I
RM
T
J
= 25 °C
Rated DC voltage
0.02 0.3
mA
T
J
= 125 °C 11 20
Maximum junction capacitance C
T
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C 1100 pF
Typical series inductance L
S
Measured from top of terminal to mounting plane 8.0 nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
-65 to +175 °C
Maximum thermal resistance,
junction to case per leg
R
thJC
DC operation 1.2
°C/W
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth, and greased 0.50
Approximate weight
2g
0.07 oz.
Mounting torque
minimum
Non-lubricated threads
6 (5)
kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style 3L TO-220AB 63CTQ100