EMD10
FEATURES
z Both the DTC123J chip and DTA123J chip in a pa
ckage.
z Mounting possible with SOT-563 automatic mounting machines.
z Transistor elements are independent, eliminating interference.
z Mounting cost and area be cut in half.
Marking: D10
T
R1
Absolute maximum
ratings (Ta=25℃)
Parameter Symbol Limits Unit
Supply voltage
V
CC
50 V
Input voltage
V
IN
-5~12 V
I
O
100
Output current
I
C(MAX)
100
mA
Power dissip
ation
Pd 150 mW
-55~+150
℃
T
R1
Electrical characteri
s
tics (T
a=2
5℃)
Parameter Symbol Min. Typ Max. Unit Conditions
V
I(off)
0.5 V
CC
=5V
,
I
O
=100μA
Input voltage
V
I(on)
1.1
V
V
O
=0.3V, I
O
=5mA
Output volt
age V
O(on)
0.1 0.3 V I
O
/I
I
=5mA/0.2
5mA
Input current I
I
3.6 mA V
I
=5V
Output current I
O(off)
0.5 μA V
CC
=50V
, V
I
=0
DC current gain G
I
80 V
O
=5V, I
O
=10mA
Input resistance R
1
1.54 2.2 2.86 KΩ -
Resistance ratio R
2
/R
1
17 21 26 -
Transition frequency
f
T
250 MHz V
CE
=10V, I
E
=5mA, f=100MHz
SOT-563
Dual Digital Transistors (NPN+PNP)
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
Digital Transistors (Built-in Resistors)
1
Rev. - 2.0
www.jscj-elec.com
Operation Junction and
Storage Temperature Range
T
J
,
T
s
tg
T
R2
Absolute maximum ratings (Ta=
25℃)
Parameter Symbol Limits Unit
Suppl
y
volt
age
V
CC
-50 V
Input voltage
V
IN
-12~5 V
I
O
-100
Output current
I
C(MAX)
-100
mA
Po
w
e
r dissip
a
tion
Pd 150 mW
-55~+150
℃
T
R2
Electrical characteristics (Ta=25℃)
Parameter S
ymbol Min. Typ Max. Unit Conditions
V
I(off)
-0.5 V
CC
=-5V, I
O
=-100μA
Input voltage
V
I(on)
-1.1
V
V
O
=-0.3V
, I
O
=-5mA
Output voltage V
O(on)
-0.1 -0.3 V I
O
/I
I
=-5mA/-0.25mA
Input current I
I
-3.6 mA V
I
=-5V
Output current I
O(off)
-0.5 μA V
CC
=-50V, V
I
=0
DC current gain G
I
80 V
O
=-5V, I
O
=-10mA
Input resistance R
1
1.54 2.2 2.86 KΩ -
Resistance ratio R
2
/R
1
17 21 26 -
Transition frequency f
T
250 MHz V
CE
=-10V, I
E
=-5mA, f=100MHz
2
Rev. - 2.0
www.jscj-elec.com
T
J
,
T
st
g
Operation Junction and
Storage Temperature Range