JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
EMH9
FEATURES
z
Two DTC114Ys chips in a package.
z
Transistor elements are independent, eliminating interference.
z
Mounting cost and area can be cut in half.
MARKING：H9
Absolute maximum ratings(Ta=25 ℃)
Parameter Symbol
Limits
Unit
Supply
v
olt
a
ge
V
CC
50 V
Input voltage
V
IN
-6~40 V
I
O
70
Output current
I
C(MAX)
100
mA
Po
w
e
r dis
s
i
p
ation
Pd 150(TOTAL) mW
-55~+150
Electrical characteristics (T
a=25℃)
Parameter Symbol Min. Typ Max. Unit Conditions
V
I(off)
0.3
V
CC
=5V ,I
O
=100µA
Input voltage
V
I(on)
1.4
V
V
O
=0.3V ,I
O
=1
mA
Outp
ut v
o
lt
ag
e
V
O(on)
0.3 V I
O
/I
I
=5mA/0.25mA
Input current
I
I
0.88 mA V
I
=5V
Outp
ut c
u
rre
nt
I
O(off)
0.5 μA V
CC
=50V, V
I
=0
DC current gain
G
I
68 V
O
=5V ,I
O
=5mA
Input resistance
R
1
7 10 13
KΩ
Resistance ratio
R
2
/R
1
3.7 4.7 5.7
Transition fre
quency
f
T
250
MHz
V
CE
=
10V ,I
E
=
-
5mA,f=
100MHz
℃
SOT-563
1
1
Dual Digital Transistors (NPN+NPN)
Digital Transistors (Built-in Resistors)
Rev. - 2.0
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T
J
,T
stg
Operation Junction and
Storage Temperature Range
0.1 1 10 100
0.1
1
10
100
110100
10
100
1000
110100
10
100
1000
0.00.40.81.21.6
0.01
0.1
1
10
0 4 8 12 16 20
0
1
2
3
4
5
6
0 25 50 75 100 125 150
0
50
100
150
200
OFF Characteristics
ON Characteristics
Ta=25
o
C
T
a
=100
o
C
V
O
=0.3V
OUTPUT
CURRENT I
O
(mA)
INPUT VOLTAG
E V
I(
ON)
(V)
T
a
=25
o
C
T
a
=100
o
C
V
O
=5V
G
I
—— I
O
OUTPUT CURRENT I
O
(mA)
DC CURRENT GAIN G
I
V
O
—— I
O
T
a
=25
o
C
T
a
=100
o
C
I
O
/I
I
=20
OUTP
UT VOLTAGE V
0
(mV)
OUTPUT CURRENT I
O
(mA)
T
a
=100
o
C
T
a
=25
o
C
V
CC
=5V
OUTPUT CURRENT I
0
(mA)
INPUT VOLTAG
E V
I
(V)
f=1MHz
T
a
=25
o
C
C
O
—— V
R
CAPACIT
ANCE C
O
(pF)
REVERSE BIAS VOLTAGE
V
R
(V)
P
D
—— T
a
POWER DISSIPATION
P
D
(mW)
AM
BIENT
T
EMPERATURE T
a
(
o
C)
Typical Characteristics
2
Rev. - 1.0
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Rev. - 2.0
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