HM5N60 / HM5N60F
600V N-Channel MOSFET
General Description
This Power MOSFET is produced using SL semi‘s
advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction based on half bridge
topology.
Features
• 4.5A, 600V, R
DS(on)
= 2.50Ω @V
GS
= 10 V
• Low gate charge ( typical 16nC)
• High ruggedness
•Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings T
C
= 25°Cunless otherwise noted
* Drain current limited by max i mum junction temperature.
Thermal Characteristics
Symbol Parameter HM5N60 HM5N60F Units
V
DSS
Drain-Source Voltage 600 V
I
D
Drain Current
- Continuous (T
C
= 25°C)
4.5 4.5* A
- Continuous (T
C
= 100°C)
2.6 2.6 * A
I
DM
Drain Current - Pulsed
(Note 1)
18 18 * A
V
GSS
Gate-Source Voltage ± 30 V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
210 mJ
E
AR
Repetitive Avalanche Energy
(Note 1)
10.0 mJ
dv/dt Peak Diode Recovery dv/dt
(Note 3)
4.5 V/ns
P
D
Power Dissipation (T
C
= 25°C)
100 33 W
- Derate above 25°C 0.8 0.26 W/°C
T
J
, T
STG
Operating and Storage Temperature Range -55 to +150 °C
T
L
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300 °C
Symbol Parameter HM5N60 HM5N60F Units
R
θJC
Thermal Resistance, Junction-to-Case 1.25 3.79 °C/W
R
θCS
Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W
R
θJA
Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W
TO-220
G
S
D
TO-220F
G
S
D
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Shenzhen H&M Semiconductor Co.Ltd
http：//www.hmsemi.com
HM5N60 / HM5N60F
Electrical Characteristics T
C
= 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 19 mH, I
AS
= 4.5 A, V
DD
= 50V, R
G
= 25 Ω, Starting T
J
= 25°C
3. I
SD
≤ 4.5 A, di/dt ≤ 200A/µs, V
DD
≤ BV
DSS,
Starting T
J
= 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially in de pe ndent of operating temperature
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 µA
600 -- -- V
∆BV
DSS
/ ∆T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250 µA, Referenced to 25°C
-- 0.6 -- V/°C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 600 V, V
GS
= 0 V
-- -- 1 µA
V
DS
= 480 V, T
C
= 125°C
-- -- 10 µA
I
GSSF
Gate-Body Leakage Current, Forward
V
GS
= 30 V, V
DS
= 0 V
-- -- 100 nA
I
GSSR
Gate-Body Leakage Current, Reverse
V
GS
= -30 V, V
DS
= 0 V
-- -- -100 nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 µA
2.0 -- 4.0 V
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= 10 V, I
D
= 2.25 A
-- 2.0 2.5 Ω
Dynamic Characteristics
C
iss
Input Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
-- 560 -- pF
C
oss
Output Capacitance -- 55 -- pF
C
rss
Reverse Transfer Capacitance -- 7 -- pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
DD
= 300 V, I
D
= 4.5A,
R
G
= 25 Ω
(Note 4, 5)
-- 10 -- ns
t
r
Turn-On Rise Time -- 40 -- ns
t
d(off)
Turn-Off Delay Time -- 40 -- ns
t
f
Turn-Off Fall Time -- 50 -- ns
Q
g
Total Gate Charge
V
DS
= 480 V, I
D
= 4.5 A,
V
GS
= 10 V
(Note 4, 5)
-- 16 - nC
Q
gs
Gate-Source Charge -- 2.5 -- nC
Q
gd
Gate-Drain Charge -- 6.5 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current -- -- 4.5 A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current -- -- 18.0 A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 4.5 A
-- -- 1.4 V
t
rr
Reverse Recovery Time
V
GS
= 0 V, I
S
= 4.5 A,
dI
F
/ dt = 100 A/µs (Note 4)
-- 300 -- ns
Q
rr
Reverse Recovery Charge -- 2.0 -- µC
HM5N60 / HM5N60F
Shenzhen H&M Semiconductor Co.Ltd
http：//www.hmsemi.com