TO-220FS SYMBOL
HMS17N65F
650V N-Channel Super Junction MOSFET
Absolute Maximum Ratings T
C
=25℃ unless otherwise specified
Thermal Resistance Characteristics
Symbol Parameter Value Unit
V
DSS
Drain
-Source Voltage 650 V
V
GS
Gate
-Source Voltage
±
20 V
I
D
Drain Current
- Continuous (T
C
= 25
℃
)
17 *
A
Drain Current
- Continuous (T
C
= 100
℃
)
11.9 *
A
I
DM
1)
Drain Current
- Pulsed
51 *
A
E
AS
2)
Single Pulsed Avalanche Energy
250 mJ
I
AR
Avalanche Current
2.4 A
dv
/dt
MOSFET dv/
dt ruggedness, VDS=0…400V 50 V/ns
dv
/dt
Reverse diode dv/
dt, V
DS
=0…400V, I
DS
���I
D
15 V/ns
P
D
Power Dissipation (T
C
= 25
℃
) 33 W
V
ESD(G-S)
Gate source ESD(HBM-C=100pF, R=1.5KΩ)
2000
V
T
J,
T
STG
Operating and Storage Temperature Range
-55 to +150
℃
Symbol Parameter Value Unit
R
θJC
Thermal Resistance, Junction
-to-Case, Max. 3.77
℃
/W
R
θJA
Thermal Resistance, Junction
-to-Ambient , Max. 80
℃
/W
* Drain current limited by maximum junction temperature
• Very Low FOM (R
DS(on)
X Q
g
)
• Extremely low switching loss
• Excellent stability and uniformity
• 100% Avalanche Tested
• Built-in ESD Diode
Parameter Value Unit
BV
DSS
@T
j,max
700 V
I
D
17
A
R
DS(on), max
0.21 Ω
Qg
, Typ
40 nC
Key Parameters
Package & Internal Circuit
Features
Application
D
G
S
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply (UPS)
• Power Factor Correction (PFC)
• AC to DC Converters
• Telecom, Solar
HM61)
Electrical Characteristics T
J
=25 C unless otherwise specified
Notes :
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. I
AS
=2.4A V
DD
=50V, R
G
=25, Starting T
J
=25C
3. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%
4. Essentially Independent of Operating Temperature
Symbol Parameter Test Conditions Min Typ Max Unit
On Characteristics
V
GS
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 670 μA 2.0 - 4.0 V
R
DS(ON)
Static Drain
-Source On-Resistance
V
GS
= 10 V, I
D
= 6.2 A - 0.185 0.21 Ω
Off Characteristics
BV
DSS
Drain
-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 1mA 650 - - V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 650 V, V
GS
= 0 - - 1 μA
V
DS
= 650 V, T
C
= 150
℃
- - 100 μA
I
GSS
Gate
-Body Leakage Current
V
GS
=
±
20 V, V
DS
= 0 V - -
±
1 μA
Dynamic Characteristics
C
iss
Input Capacitance
V
DS
= 400 V, V
GS
= 0 V,
f = 1.0 MHz
- 1750 - pF
C
oss
Output Capacitance
- 39 - pF
C
rss
Reverse Transfer Capacitance
- 3.4 - pF
Switching Characteristics
t
d(on)
Turn
-On Time
V
DS
= 325 V, I
D
= 8.7 A,
R
G
= 25 Ω
(Note 3,4)
- 39 - ns
t
r
Turn
-On Rise Time - 21 - ns
t
d(off)
Turn
-Off Delay Time - 171 - ns
t
f
Turn
-Off Fall Time - 18 - ns
Q
g(
Total Gate Charge
V
DS
= 520 V, I
D
= 8.7 A,
V
GS
= 10 V
(Note 3,4)
- 40 - nC
Q
gs
Gate
-Source Charge - 8 - nC
Q
gd
Gate
-Drain Charge - 12 - nC
Drain
-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain
-Source Diode Forward Current - - 17 A
I
SM
Maximum Pulsed Drain
-Source Diode Forward Current - - 51 A
V
SD
Drain
-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 8.7 A - - 1.3 V
trr
Reverse Recovery Time
V
R
= 400 V, I
F
= 8.7 A
di
F
/dt = 100 A/μs
- 340 - ns
Qrr
Reverse Recovery Charge
- 4.7 - μC
HMS17N65F