UNISONIC TECHNOLOGIES CO., LTD
2N7002K
Power MOSFET
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Copyright © 2021 Unisonic Technologies Co., Ltd QW-R502-541.F
300m
A
, 60V N-CHANNEL
ENHANCEMENT MODE
MOSFET
DESCRIPTION
The UTC 2N7002K uses advanced technology to provide
excellent R
DS(ON)
, low gate charge and low gate voltages during
operation. This device is suitable for use as a load switch or in
PWM applications.
FEATURES
* Low Reverse Transfer Capacitance (C
RSS
= typical 3.0 pF)
* ESD Protected
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
1.Gate
2.Sourc
e
3.Drai
n
ORDERING INFORMATION
Ordering Number
Package
Pin Assignment
Packing
Lead Free Halogen Free 1 2 3
2N7002KL-AE2-R 2N7002KG-AE2-R SOT-23-3 G S D Tape Reel
Note: Pin Assignment: G: Gate S: Source D: Drain
MARKING
2N7002K Power MOSFET
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www.unisonic.com.tw QW-R502-541.F
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C, unless otherwise specified.)
PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage V
DSS
60 V
Gate-Source Voltage V
GSS
±20 V
Drain Current
Continuous
I
D
300
mA
Pulse(Note 2) 800
Power Dissipation
P
D
350 mW
Derating above T
A
=25°C 2.8 mW/°C
Junction Temperature T
J
+150 °C
Storage Temperature T
STG
-55 ~ +150 °C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
�� ELECTRICAL CHARACTERISTICS (T
A
=25°C, unless otherwise specified.)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BV
DSS
V
GS
=0V, I
D
=10µA 60 V
Drain-Source Leakage Current I
DSS
V
DS
=60V, V
GS
=0V 1.0 µA
Gate-Source Leakage Current I
GSS
V
DS
=0V, V
GS
=±20V ±10 µA
ON CHARACTERISTICS
Gate Threshold Voltage V
GS
(
TH
)
V
DS
=10V, I
D
=1mA 1.0 1.85 2.5 V
Static Drain-Source On-Resistance (Note) R
DS(ON)
V
GS
=10V, I
D
=300mA 3.0 Ω
V
GS
=4.5V, I
D
=200mA 4.0 Ω
DYNAMIC PARAMETERS
Input Capacitance (Note 1) C
ISS
V
DS
=25V, V
GS
=0V, f=1.0MHz
25 pF
Output Capacitance C
OSS
11 pF
Reverse Transfer Capacitance C
RSS
5 pF
SWITCHING PARAMETERS
Total Gate Charge (Note 1) Q
G
V
DS
=48V, V
GS
=10V, I
D
=0.3A
I
G
=1mA (Note 1, 2)
5.22 nC
Gate to Source Charge Q
GS
1.8 nC
Gate to Drain Charge Q
GD
0.8 nC
Turn-ON Delay Time t
D
(
ON
)
I
D
=0.2 A, V
DD
=30V, V
GS
=10V,
R
L
=150Ω, R
G
=10Ω
12 ns
Turn-OFF Delay Time t
D
(
OFF
)
20 ns
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain-Source Diode
Forward Current
I
S
300 mA
Maximum Pulsed Drain-Source Diode
Forward Current
I
SM
0.8 A
Drain-Source Diode Forward Voltage V
SD
V
GS
=0V, I
S
=300mA (Note ) 0.88 1.5 V
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size.
2. Pulse width
≦300μs, Duty cycle≦1%