UNISONIC TECHNOLOGIES CO., LTD
2N7002
Power MOSFET
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Copyright © 2021 Unisonic Technologies Co., Ltd QW-R203-037.O
0.3
A
, 60V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 2N7002 uses advanced technology to provide
excellent R
DS(ON)
, low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in PWM
applications.
FEATURES
* High Density Cell Design for Low R
DS(ON)
.
* Voltage Controlled Small Signal Switch
* Rugged and Reliable
* High Saturation Current Capability
SYMBOL
ORDERING INFORMATION
Ordering Number
Package
Pin Assignment
Packing
Lead Free Halogen Free 1 2 3
2N7002L-AE2-R 2N7002G-AE2-R SOT-23-3 G S D Tape Reel
Note: Pin Assignment: G: Gate S: Source D: Drain
MARKING
3P
L: Lead Free
G: Halogen Free
2N7002 Power MOSFET
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ABSOLUTE MAXIMUM RATINGS (T
A
=25°C, unless otherwise specified.)
PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage V
DSS
60 V
Drain-Gate Voltage (R
GS
≤1MΩ) V
DGR
60 V
Gate Source Voltage
Continuous
V
GSS
20
V
Non Repetitive(t
P
<50μs) 40
Drain Current
Continuous
I
D
300
mA
Pulsed 800
Power Dissipation
P
D
200 mW
Derated Above 25°C 1.6 mW/°C
Junction Temperature T
J
+ 150 °C
Storage Temperature T
STG
-55 ~ +150 °C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER SYMBOL RATINGS UNIT
Junction to Ambient θ
JA
625 °C/W
Junction to Case θ
JC
215 °C/W
ELECTRICAL CHARACTERISTICS (T
A
=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BV
DSS
V
GS
=0V, I
D
=10μA 60 V
Drain-Source Leakage Current I
DSS
V
DS
=60V, V
GS
=0V 1 μA
Gate-Source Leakage Current
I
GSSF
V
GS
=20V, V
DS
=0V 100 nA
I
GSSR
V
GS
=-20V, V
DS
=0V -100 nA
ON CHARACTERISTICS
(Note)
Gate Threshold Voltage V
GS(TH)
V
GS
=V
DS
, I
D
=250μA 1.0 2.1 2.5 V
Drain-Source On-Voltage V
DS (ON)
V
GS
=10V, I
D
=300mA 0.6 3.75
V
V
GS
=5.0V, I
D
=50mA 0.375
Static Drain-Source On-Resistance R
DS (ON)
V
GS
=10V, I
D
=300mA 3.0
Ω
V
GS
=4.5V, I
D
=50mA 4.0 Ω
DYNAMIC CHARACTERISTICS
Input Capacitance C
ISS
V
DS
=25V, V
GS
=0V, f=1.0MHz
50 pF
Output Capacitance C
OSS
25 pF
Reverse Transfer Capacitance C
RSS
5 pF
Turn-On Time t
ON
V
DD
=30V, R
L
=150Ω, I
D
=200mA,
V
GS
=10V, R
G
=25Ω
20 nS
Turn-Off Time t
OFF
20 nS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain-Source
Diode Forward Current
I
S
300 mA
Maximum Pulsed Drain-Source Diode
Forward Current
I
SM
0.8 A
Drain-Source Diode Forward Voltage V
SD
V
GS
=0V, Is=300mA (Note) 0.88 1.5 V
Note: Pulse Test: Pulse Width≤300μs, Duty Cycle≤2.0%