www.hygroup.com.tw
Features 4GBJ
● Glass passivated chip
● Low forward voltage drop
● Ideal for printed circuit board RoHS
● High surge current capability
COMPLIANT
Mechanical Data
● Polarity: Symbol marked on body
● Mounting position: Any
Applications
● General purpose use in AC/DC bridge full wave rectification,
for SMPS, lighting ballaster, adapter, etc.
Maximum Ratings and Electrical Characteristics
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
4GBJ 4GBJ 4GBJ 4GBJ 4GBJ 4GBJ 4GBJ
10005 1001 1002 1004 1006 1008 1010
Maximum Repetitive Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V
Maximum RMS Voltage VRMS 35 70 140 280 420 560 700
V
Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000
V
Maximum Average Forward (with heatsink Note 2)
Rectified Current @ TC=100℃ (without heatsink)
Peak Forward Surge Current, 8.3mS Single Half Sine-Wave,
Superimposed on Rated Load (JEDEC Method)
I
2
t Rating for Fusing (t<8.3mS) I
2
t A
2
s
Peak Forward Voltage per Diode at 5A DC
VF V
Maximum DC Reverse Current at Rated @TJ=25℃
DC Blocking Voltage per Diode @TJ=125℃
Typical Junction Capacitance per Diode (Note1) CJ pF
Typical Thermal Resistance to Ambient （without heatsink）
RθJA
℃/W
Typical Thermal Resistance to case （with heatsink (Note2) ）
RθJC
℃/W
Typical Thermal Resistance to lead （without heatsink）
RθJL
℃/W
Operating Junction Temperature Range TJ
℃
Storage Temperature Range
TSTG
℃
Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
2.Device mounted on 150mm*150mm*1.6mm Cu plate heatsink.
3.The typical data above is for reference only
4GBJ10*-U/B-00/99-00/01
Rev. 9, 22-Apr-2019
-55 to +150
-55 to +150
Characteristics
Symbol
I(AV)
IFSM
IR
Unit
A
A
μA
210
500
55
24
1.4
3
10.0
3.0
183
1.0
5.0
4GBJ10005 THRU 4GBJ1010
Reverse Voltage - 50 to 1000 Volts
Forward Current - 10.0 Amperes
Package Outline Dimensions in Inches (Millimeters)
Pb
Glass Passivated Bridge Rectifiers
Rating and Characteristic Curves
4GBJ10005 THRU 4GBJ1010
The curve above is for reference only. 4GBJ10*-U/B-00/99-00/01
Rev. 9, 22-Apr-2019
0.1
1
0 0.2 0.4 0.6 0.8 1 1.2
T
J
=25°C
TJ=75
°
C
TJ=100
°
C
TJ=125
°
C
Pulse Width 300uS
2%Duty Cycle
Fig. 4 - Typical Forward Characteristics
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
Fig. 2 - Maximum Non-Repetitive Surge Current
Number of Cycles at 60Hz
Peak Forward Surge Current (A)
0
50
100
150
200
250
1 10 100
8.3mS Single Half-Sine-Wave
(JEDEC METOD)
Instantaneous Reverse Current (uA)
Fig. 3 - Typical Reverse Characteristics
1
10
100
1000
20 40 60 80 100
T
J
=25°C
TJ=75
°
C
T
J
=100°C
TJ=125°C
Percent of Rated Peak Reverse Voltage (%)
0
2
4
6
8
10
0 50 100 150
Fig. 1 - Forward Current Derating Curve
Average Forward Current (A)
Without heatsink
With heatsink
Fig. 5 - Typical Junction Capacitance
Capacitance (pF)
1
10
100
1 10 100
T
J
=25°C,f=1MHz
Reverse Voltage (V)
Case Temperature (℃)
7.5