Features
●Blocking voltage:1600V
●Three Phase Bridge and a Thyristor
●Isolated Module package
Applications
●Inverter for AC or DC motor control
●Current stabilized power supply
●Switching power supply
●Note: Products with logo or
are made by HY Electronic (Cayman) Limited.
Maximum Ratings and Electrical Characteristics
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Symbol Unit
ID A
IFSM A
I
2
t A
2
s
Visol V
Tvj
Tstg
Ms Nm
Weight g
Rth(j-c)
℃/W
Rth(c-s) ℃/W
Typ Max
/ 1.4 V
MDST150-16-B-92-00
Rev. 1, 22-Apr-2020
MDST150-16
Three Phase Bridge
Reverse Voltage - 1600 Volts
Forward Current - 150 Amperes
Package Outline Dimensions in Millimeters
TYPE
VRRM VRSM
MDST150-16 1600V 1700V
Characteristics Item Values
Three phase, full wave Tc=100℃
Output Current(D.C.) 150
t=10mS Tvj =45℃
Surge forward current 1800
t=10mS Tvj =45℃
Circuit Fusing Consideration 16200
a.c.50HZ;r.m.s.;1min Isolation Breakdown Voltage(R.M.S) 3000
Operating Junction Temperature -40 to + 150
℃
Storage Temperature -40 to + 125
To terminals(M4)
To terminals(M6)
Mt Mounting Torque
2±15％
5±15％
Nm
To heatsink(M6)
5±15％
Module (Approximately) 360
Junction to Case Thermal Impedance, max 0.14
Case to Heatsink Thermal Impedance, max 0.10
T=25℃ IF=150A
VFM Forward Voltage Drop, max
Min
/
Tvj =25℃,VRD=VRRM
IRD Repetitive Peak Reverse Current, max / /
0.1
9
mA
Tvj =150℃,VRD=VRRM
Rating and Characteristic Curves
MDST150-16
Symbol Unit
ITAV A
ITSM A
I
2
t A
2
S
Visol V
Tvj ℃
Tstg ℃
di/dt A/us
dv/dt V/us
Rth(j-c) ℃/W
Rth(c-s) ℃/W
Min. Typ Max
/ / 1.6
V
IRRM/IDRM / / 25 mA
VTO
/ / 0.9
V
Rt
/ / 2
mΩ
VGT
/ / 3
V
IGT
/ / 150
m A
VGD
/ / 0.25
V
IGD
/ / 6
mA
IL
/ 300 600
mA
IH
/ 150 250
mA
tgd us
tq us
MDST150-16-B-92-00
Rev. 1, 22-Apr-2020
Characteristics
Item Values
Tc=90℃,Single Phase half wave 180
0
conduction
Average On-State Current 150
Tvj =45℃ t=10mS(50Hz),, sine VR=0
Surge On-State Current 1500
Circuit Fusing Consideration 11250
a.c.50HZ;r.m.s.;1min
Isolation Breakdown Voltage(R.M.S) 3000
Operating Junction Temperature -40 to + 125
Storage Temperature -40 to + 125
T
VJ
=T
VJM
,V
D
=1/2V
DRM
, I
G
=100mA d
iG
/dt=0.1A/us
Critical Rate of Rise of On-State Current 150
T
VJ
=T
VJM
,V
D
=2/3V
DRM
,linear voltage rise
Critical Rate of Rise of Off-State Voltage, min 500
Junction to Case
Thermal Impedance, max 0.18
T
VJ
=25℃,V
D
=6V
Gate Trigger Voltage, max
Case to Heatsink
Thermal Impedance, max 0.10
T=25℃ I
T
=150A
VTM Peak On-State Voltage, max.
T
VJ
=T
VJM
,V
R
=V
RRM
,V
D
=V
DRM
Repetitive Peak Reverse Current, max
/Repetitive Peak Off-State Current,max
T
VJ
=T
VJM
Threshold voltage
Slope resistance, max
T
VJ
=25℃,V
D
=6V
Gate Trigger current, max
T
VJ
=125℃,V
D
=2/3V
DRM
Required DC gate voltage , max
T
VJ
=125℃,V
D
=2/3V
DRM
Required DC gate current , max
T
VJ
=25℃,R
G
=33Ω
Latching current, max
T
VJ
=25℃,V
D
=6V
Holding current, max
T
VJ
=25℃
Gate controlled delay time
1
100
T
VJ
=T
VJM
Circuit commutated turn-off time