© Semiconductor Components Industries, LLC, 2018
April, 2020 − Rev. 2
1 Publication Order Number:
NVMFS015N10MCL/D
MOSFET - Power, Single
N-Channel
100 V, 12.2 mW, 47.1 A
NVMFS015N10MCL
Features
• Small Footprint (5x6 mm) for Compact Design
• Low R
DS(on)
to Minimize Conduction Losses
• Low Q
G
and Capacitance to Minimize Driver Losses
• NVMFWS015N10MCL − Wettable Flank Option for Enhanced
Optical Inspection
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage V
DSS
100 V
Gate−to−Source Voltage V
GS
±20 V
Continuous Drain
Current R
q
JC
(Notes 1, 3)
Steady
State
T
C
= 25°C
I
D
47.1
A
T
C
= 100°C 29.8
Power Dissipation
R
q
JC
(Note 1)
Steady
State
T
C
= 25°C
P
D
59.5
W
T
C
= 100°C 23.8
Continuous Drain
Current R
q
JA
(Notes 1, 2, 3)
Steady
State
T
A
= 25°C
I
D
10.7
A
T
A
= 100°C 6.8
Power Dissipation
R
q
JA
(Notes 1, 2)
Steady
State
T
A
= 25°C
P
D
3.1
W
T
A
= 100°C 1.2
Pulsed Drain Current
T
A
= 25°C, t
p
= 10 ms
I
DM
259 A
Operating Junction and Storage Temperature
Range
T
J
, T
stg
−55 to
+175
°C
Source Current (Body Diode) IS 49.6 A
Single Pulse Drain−to−Source Avalanche
Energy (I
AS
= 2.6 A)
E
AS
469 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case − Steady State
R
q
JC
2.1
°C/W
Junction−to−Ambient − Steady State (Note 2)
R
q
JA
40.8
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm
2
, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
MARKING
DIAGRAM
www.onsemi.com
XXXXXX
AYWZZ
G (4)
S (1,2,3)
N−CHANNEL MOSFET
D (5,6)
S
S
S
G
D
D
D
D
1
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
V
(BR)DSS
R
DS(ON)
MAX I
D
MAX
100 V
12.2 mW @ 10 V
47.1 A
18.3 mW @ 4.5 V
DFN5
CASE 488AA
STYLE 1
XXXXXX = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
NVMFS015N10MCL
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 mA
100 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/
T
J
60
mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V,
V
DS
= 100 V
T
J
= 25 °C 1.0
mA
T
J
= 125°C 250
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= 20 V 100 nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 77 mA
1 1.5 3 V
Threshold Temperature Coefficient V
GS(TH)
/T
J
−5.0 mV/°C
Drain−to−Source On Resistance R
DS(on)
V
GS
= 10 V I
D
= 14 A 9.7 12.2
mW
V
GS
= 4.5 V I
D
= 11 A 13.3 18.3
Forward Transconductance g
FS
V
DS
=5 V, I
D
= 14 A 51 S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1 MHz, V
DS
= 50 V
1338
pF
Output Capacitance C
OSS
521
Reverse Transfer Capacitance C
RSS
9.0
Total Gate Charge Q
G(TOT)
V
GS
= 4.5 V, V
DS
= 50 V; I
D
= 14 A 9.0 nC
Total Gate Charge Q
G(TOT)
V
GS
= 10 V, V
DS
= 50 V; I
D
= 14 A 19 nC
Threshold Gate Charge Q
G(TH)
V
GS
= 10 V, V
DS
= 50 V; I
D
= 14 A
2.0
nC
Gate−to−Source Charge Q
GS
3.0
Gate−to−Drain Charge Q
GD
3.0
Plateau Voltage V
GP
2.7 V
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
t
d(ON)
V
GS
= 10 V, V
DS
= 50 V,
I
D
= 14 A, R
G
= 6.0 W
8.4
ns
Rise Time t
r
2.7
Turn−Off Delay Time t
d(OFF)
23.8
Fall Time t
f
4.6
DRAIN−SOURCE DIODE CHARACTERISTICS
Source to Drain Diode Forward Voltage
V
SD
V
GS
= 0 V, I
S
= 2 A 0.7 1.2
V
V
GS
= 0 V, I
S
= 14 A 0.83 1.3
Reverse Recovery Time t
rr
I
F
= 7 A, di/dt = 300 A/ms
20 ns
Reverse Recovery Charge Q
rr
33 nC
Reverse Recovery Time t
rr
I
F
= 7 A, di/dt = 1000 A/ms
14 ns
Reverse Recovery Charge Q
rr
76 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.