TGL2767-SM
2 – 31GHz Voltage Variable Attenuator
Data Sheet Rev. C June 2020 | Subject to change without notice
- 1 of 11 -
www.qorvo.com
Product Description
The TGL2767–SM is a packaged wideband voltage-
variable attenuator using Qorvo's production 0.15um
GaAs pHEMT process (QPHT15). Operating from 2 – 31
GHz, the TGL2767–SM offers > 20 dB of attenuation
range with < 2 dB insertion loss in the reference state.
The TGL2767–SM's broadband performance allows it to
be a single solution for a number of radar and
communication bands, as well as electronic warfare,
instrumentation and other general RF–based
applications.
The TGL2767–SM is fully matched to 50 ohms and
offered in a small 3.00 x 3.00 mm surface mount
package. This, along with using standard control and
reference voltages, allows users to integrate the
TGL2767–SM into their system with minimal effort.
Lead-free and RoHS compliant.
Product Features
• Frequency Range: 2 – 31 GHz
• Attenuation Range: 20 dB
• Insertion Loss (Ref. State): < 2 dB
• Control Voltage: 0.0 to 1.5 V
• Reference Voltage: 1.5 V
• Package Size: 3.00 x 3.00 x 1.53 mm
Performance is typical across frequency. Please
reference electrical specification table and data plots for
more details.
Block Diagram
Applications
• Commercial and Military Radar
• Satellite Communications
• Point to Point Radio
• Electronic Warfare
• Instrumentation
• General Purpose
Ordering Information
Part No.
Description
TGL2767-SM
2–31 GHz Voltage Variable Attenuator
TGL2767-SM EVB
2–31 GHz Voltage Var. Attenuator
Evaluation Board
1
2
3
10
9
8
4 5 6 7
14 13 12 11
Voltage
Variable
Attenuator
RF
Output
RF
Input
TGL2767-SM
2 – 31GHz Voltage Variable Attenuator
Data Sheet Rev. C June 2020 | Subject to change without notice
- 2 of 11 -
www.qorvo.com
Absolute Maximum Ratings
Parameter
Value/Range
Control Voltage (V
C
, V
S
)
± 3.0 V
Control Current (I
C
, I
S
)
3 mA
Input Power (P
IN
)
30 dBm
Power Dissipation (P
DISS
)
1 W
Mounting Temperature (30 seconds)
260 °C
Operating Channel Temperature
150 °C
Storage Temperature
-55 to 150 °C
Operation of this device outside the parameter ranges given
above may cause permanent damage. These are stress ratings
only, and functional operation of the device at these conditions
is not implied.
Recommended Operating Conditions
Parameter
Value/Range
Control Voltage (V
C
); V
C
≤ V
S
0 – 1.5 V
Reference Voltage
1
(V
S
)
1.5 V
Operating Temperature Range
-40 to +85 °C
Note:
1
V
S
can be adjusted as needed to compensate for the
FET threshold variations among wafer/lots.
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all
recommended operating conditions.
Electrical Specifications
Test conditions, unless otherwise noted: 25 °C, V
C
= 0 – 1.5 V, V
S
= 1.5 V; V
C
≤ V
S
Parameter
Min
Typical
Max
Units
Frequency Range
2
31
GHz
Attenuation Range
20
dB
Reference State Insertion Loss (V
C
= 1.5 V)
<2.0
dB
Input Return Loss
>12
dB
Output Return Loss
>12
dB
IIP3 (10 MHz tone spacing, P
IN
/Tone = 10 dBm)
V
C
set for 0 dB
>38
dBm
V
C
set for 5 dB
>25
dBm
V
C
set for 10 dB
>22
dBm
V
C
set for 15 dB
>22
dBm
V
C
set for 20 dB
>30
dBm