TIP32 / TIP32A / TIP32C — PNP Epitaxial Silicon Transistor
Publication Order Number:
TIP32C/D
© 2000 Semiconductor Components Indus
tries, LLC.
November-2017,Rev. 2
TIP32 / TIP32A / TIP32C
PNP Epitaxial Silicon Transistor
Features
• Medium Power Linear Switching Applications
• Complementary to TIP31 Series
Ordering Information
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the re co mmen ded operating co nd iti ons an d s tres si ng the parts to these levels is not recommended. In add i-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
C
= 25°C unless otherwise noted.
Part Number Top Mark Package Packing Method
TIP32 TIP32 TO-220 3L (Single Gauge) Bulk
TIP32A TIP32A TO-220 3L (Single Gauge) Bulk
TIP32ATU TIP32A TO-220 3L (Single Gauge) Rail
TIP32C TIP32C TO-220 3L (Single Gauge) Bulk
TIP32CTU TIP32C TO-220 3L (Single Gauge) Rail
Symbol Parameter Value Unit
V
CBO
Collector-Base Voltage
TIP32 -40
VTIP32A -60
TIP32C -100
V
CEO
Collector-Emitter Voltage
TIP32 -40
VTIP32A -60
TIP32C -100
V
EBO
Emitter-Base Voltage -5 V
I
C
Collector Current (DC) -3 A
I
CP
Collector Current (Pulse) -5 A
I
B
Base Current -3 A
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature Range -65 to 150 °C
1.Base 2.Collector 3.Emitter
1
TO-220
TIP32 / TIP32A / TIP32C — PNP Epitaxial Silicon Transistor
www.onsemi.com
2
Thermal Characteristics
Values are at T
C
= 25°C unless otherwise noted.
Electrical Characteristics
Values are at T
C
= 25°C unless otherwise noted.
Note:
1.
Pul
se test: pw ≤ 300 μs, duty cycle ≤ 2%.
Symbol Parameter Value Unit
P
C
Collector Dissipation (T
A
= 25°C) 2
W
Collector Dissipation (T
C
= 25°C) 40
Symbol Parameter Conditions Min. Max. Unit
V
CEO
(sus)
Collector-Emitter Sustaining
Voltage
(1)
TIP32
I
C
= -30 mA, I
B
= 0
-40
V TIP32A -60
TIP32C -100
I
CEO
Collector Cut-Off Current
TIP32 /
TIP32A
V
CE
= -30 V, I
B
=
0-0.3
mA
TIP32C V
CE
= -60 V, I
B
=
0-0.3
I
CES
Collector Cut-Off Current
TIP32 V
CE
= -40 V, V
EB
= 0 -200
μA TIP32A V
CE
= -60 V, V
EB
= 0 -200
TIP32C V
CE
= -100 V, V
EB
= 0 -200
I
EBO
Emitter Cut-Off Current V
EB
= -5 V, I
C
= 0 -1 mA
h
FE
DC Current Gain
(1)
V
CE
= -4 V, I
C
= -1 A 25
V
CE
= -4 V, I
C
=- 3 A 10 50
V
CE
(sat) Collector-Emitter Saturation Voltage
(1)
I
C
= -3 A, I
B
= -375 mA -1.2 V
V
BE
(on) Base-Emitter On Voltage
(1)
V
CE
= -4 V, I
C
= -3 A -1.8 V
f
T
Current Gain Bandwidth Product
V
CE
= -10 V, I
C
= -500 mA,
f = 1 MHz
3.0 MHz