Si2308BDS
www.vishay.com
Vishay Siliconix
S21-0226-Rev. D, 08-Mar-2021
1
Document Number: 69958
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N-Channel 60 V (D-S) MOSFET
Marking Code: Si2308BDS (L8)
FEATURES
• Halogen-free according to IEC 61249-2-21
available
• TrenchFET
®
power MOSFET
• 100 % R
g
and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Battery Switch
• DC/DC Converter
Notes
a. T
C
= 25 °C
b. Surface mounted on 1" x 1" FR4 board
c. t = 5 s
d. Maximum under steady state conditions is 130 °C/W
PRODUCT SUMMARY
V
DS
(V) 60
R
DS(on)
max. (Ω) at V
GS
= 10 V 0.156
R
DS(on)
max. (Ω) at V
GS
= 4.5 V 0.192
Q
g
typ. (nC) 2.3
I
D
(A)
a
2.1
Configuration Single
Top View
SOT-23 (TO-236)
1
G
2
S
D
3
N-Channel MOSFET
G
D
S
ORDERING INFORMATION
Package TSOP-6 Single
Lead (Pb)-free SI2308BDS-T1-E3
Lead (Pb)-free and halogen-free
SI2308BDS-T1-GE3
SI2308BDS-T1-BE3
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage V
DS
60
V
Gate-source voltage V
GS
±20
Continuous drain current (T
J
= 150 °C)
T
C
= 25 °C
I
D
2.3
A
T
C
= 70 °C 1.8
T
A
= 25 °C 1.9
b,c
T
A
= 70 °C 1.5
b,c
Pulsed drain current I
DM
8
Continuous source-drain diode current
T
C
= 25 °C
I
S
1.39
T
A
= 25 °C 0.91
b,c
Avalanche current
L = 0.1 mH
I
AS
6
Single pulse avalanche energy E
AS
1.8
Maximum power dissipation
T
C
= 25 °C
P
D
1.66
W
T
C
= 70 °C 1.06
T
A
= 25 °C 1.09
b,c
T
A
= 70 °C 0.7
b,c
Operating junction and storage temperature range T
J
, T
stg
-55 to +150 °C
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYPICAL MAXIMUM UNIT
Maximum Junction-to-Ambient
b, d
t ≤ 5 s R
thJA
90 115
°C/W
Maximum Junction-to-Foot (Drain) Steady State R
thJF
60 75
Si2308BDS
www.vishay.com
Vishay Siliconix
S21-0226-Rev. D, 08-Mar-2021
2
Document Number: 69958
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage V
DS
V
DS
= 0 V, I
D
= 250 μA 60 - - V
V
DS
temperature coefficient ΔV
DS
/T
J
I
D
= 250 μA
-55-
mV/°C
V
GS(th)
temperature coefficient ΔV
GS(th)
/T
J
--5-
Gate-source threshold voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 1 - 3 V
Gate-source leakage I
GSS
V
DS
= 0 V, V
GS
= ± 20 V - - ± 100 nA
Zero gate voltage drain current I
DSS
V
DS
= 60 V, V
GS
= 0 V - - 1
μA
V
DS
= 60 V, V
GS
= 0 V, T
J
= 55 °C - - 10
On-state drain current
a
I
D(on)
V
DS
≥ -5 V, V
GS
= 10 V 8 - - A
Drain-source on-state resistance
a
R
DS(on)
V
GS
= 10 V, I
D
= 1.9 A - 0.130 0.156
Ω
V
GS
= 4.5 V, I
D
= 1.7 A - 0.160 0.192
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 1.9 A - 5 - S
Dynamic
b
Input capacitance C
iss
V
DS
= 30 V, V
GS
= 0 V, f = 1 MHz
- 190 -
pFOutput capacitance C
oss
-26-
Reverse transfer capacitance C
rss
-15-
Total gate charge Q
g
V
DS
= 30 V, V
GS
= 10 V, I
D
= 1.9 A - 4.5 6.8
nC
V
DS
= 30 V, V
GS
= 4.5 V, I
D
= 1.9 A
-2.33.5
Gate-source charge Q
gs
-0.8-
Gate-drain charge Q
gd
-1-
Gate resistance R
g
f = 1 MHz 0.6 2.8 5.6 Ω
Turn-on delay time t
d(on)
V
DD
= 30 V, R
L
= 20 Ω
I
D
≅ 1.5 A, V
GEN
= 10 V, R
g
= 1 Ω
-46
ns
Rise time t
r
-1015
Turn-off delay time t
d(off)
-1015
Fall time t
f
- 7 10.5
Turn-on delay time t
d(on)
V
DD
= 30 V, R
L
= 20 Ω
I
D
= 1.5 A, V
GEN
= 4.5 V, R
g
= 1 Ω
-1523
Rise time t
r
-1624
Turn-off delay time t
d(off)
-1117
Fall time t
f
-1117
Drain-Source Body Diode Characteristics
Continuous source-drain diode current I
S
T
C
= 25 °C - - 1.39
A
Pulse diode forward current
a
I
SM
--8
Body diode voltage V
SD
I
S
= 1.5 A - 0.8 1.2 V
Body diode reverse recovery time t
rr
I
F
= 1.5 A, dI/dt = 100 A/μs, T
J
= 25 °C
-1523ns
Body diode reverse recovery charge Q
rr
-1015nC
Reverse recovery fall time t
a
-12-
ns
Reverse recovery rise time t
b
-3-