Document Number: MC34712
Rev. 8.0, 8/2016
NXP Semiconductors
Data Sheet: Technical Data
© 2016 NXP B.V.
3.0 A 1.0 MHz fully integrated DDR
switch-mode power supply
The SMARTMOS 34712 is a highly integrated, space efficient, low cost, single
synchronous buck switching regulator with integrated N-channel power
MOSFETs. It is a high performance point-of-load (PoL) power supply with the
ability to track an external reference voltage.
Its high efficient 3.0 A sink and source capability combined with its voltage
tracking/sequencing ability and tight output regulation, makes it ideal to provide
the termination voltage (V
TT
) for modern data buses such as Double-Data-Rate
(DDR) memory buses, including but not limited to DDR, DDR2, DDR3, and
DDR4 memories. It also provides a buffered output reference voltage (V
REF
) to
the memory chipset
The 34712 offers the designer the flexibility of many control, supervisory, and
protection functions to allow for easy implementation of complex designs. It is
housed in a Pb-free, thermally enhanced, and space efficient 24 pin exposed
pad QFN.
Features
•50 mΩ integrated N-channel power MOSFETs
• Input voltage operating range from 3.0 V to 6.0 V
• ±1% Accurate output voltage, ranging from 0.6 V to 1.35 V
• ±1% Accurate buffered reference output voltage
• Programmable switching frequency range from 200 kHz to 1.0 MHz with a
default of 1.0 MHz
• Overcurrent limit and short-circuit protection
• Thermal shutdown
• Output overvoltage and undervoltage detection
• Active low power-good output signal
• Active low standby and shutdown inputs
Figure 1. 34712 simplified application diagram
SWITCH-MODE POWER SUPPLY
EP SUFFIX
98ARL10577D
24-PIN QFN
34712
V
IN
MCU
PVIN
VREFIN
VIN
VDDI
FREQ
GND
SD
STBY
BOOT
SW
VOUT
INV
COMP
VREFOUT
PGND
PG
DDR MEMORY
CONTROLLER
34712
V
DDQ
DDR MEMORY
CHIPSET
V
IN
V
REF
V
TT
V
DDQ
V
DDQ
MEMORY
BUS
TERMINATING
RESISTORS
(3.0 TO 6.0 V)
