AS6C8016A
Low Power, 512Kx16 SRAM
Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070
TEL: (650) 610-6800 FAX: (650) 620-9211
Alliance Memory Inc. reserves the right to change products or specification without notice.
1 Rev. 3.0 Sep /2014
Revision History
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Revision No
History
Date
Remark
1.0
Initial Issue
August 2010
Preliminary
2.0
tDW updated to 25ns
October 2012
3.0
Update USA HQ moved - change of address
September 2014
AS6C8016A
Low Power, 512Kx16 SRAM
Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070
TEL: (650) 610-6800 FAX: (650) 620-9211
Alliance Memory Inc. reserves the right to change products or specification without notice.
2 Rev. 3.0 Sep /2014
FEATURES
•
Process Technology : 0.15m Full CMOS
•
Organization : 512K x 16 bit
•
Power Supply Voltage : 2.7V ~ 3.6V
•
Low Data Retention Voltage : 1.5V(Min.)
•
Three state output and TTL Compatible
•
Package Type : 48-FPBGA
•
dual CS – A6 is CS2
•
All parts are ROHS Compliant
GENERAL DESCRIPTION
The AS6C8016A families are fabricated by
advanced
full CMOS process technology. The families
support
industrial temperature range and Chip Scale
Package
for user flexibility of system design. The families
also
support low data retention voltage for battery back-
up
operation with low data retention current.
PRODUCT FAMILY
Product
Family
Operating
Temperature
Vcc
Range
Speed
Power Dissipation
PKG
Type
Standby
(I
SB1
, Typ.)
Operating
(I
CC1
.Max.)
AS6C8016A-55BIN
Industrial
(-40 ~ 85
o
C)
2.7 ~ 3.6 V
55 ns
2 A
1)
4 mA
48-FPBGA
Row Select
I/O Circuit
Column Select
Data
Cont
Data
Cont
Pre-charge Circuit
Memory Array
2048 x 4096
A1
A2
A3
A4
A5
A6
A7
A0
A8
A9
A1 1
WE
OE
UB
LB
CS1
CS2
DQ0 ~ DQ7
DQ8 ~ DQ15
V
CC
V
SS
Control Logic
FUNCTIONAL BLOCK DIAGRAM
A12 A13 A14 A15 A16 A17 A18
A10