RClamp0532T
Final Datasheet Rev 2.0
March 17, 2016
www.semtech.com
Page 1
Semtech
RClamp0532T
PROTECTION PRODUCTS
Features
• TransientProtectionto
IEC61000-4-2(ESD)30kV(Air),30kV(Contact)
IEC61000-4-4(EFT)4kV(5/50ns)���
IEC61000-4-5(Lightning)10A(8/20µs)
• VerySmallPCBArea
• ProtectstwoHigh-SpeedDataLines
• WorkingVoltage:5V
• LowCapacitance:0.60pFTypical
• DynamicResistance:0.020Ohms(Typ)
• Solid-StateSilicon-AvalancheTechnology
Mechanical Characteristics
• SLP1610P4TPackage
• Pb-Free,HalogenFree,RoHS/WEEECompliant
• NominalDimensions:1.6x1.0x0.40mm
• LeadFinish:NiPdAu
• MoldingCompoundFlammabilityRating:UL94V-0
• Marking:MarkingCode+DateCode
• Packaging:TapeandReel
Applications
• 1G/2.5G/5G/10GEthernet
• IntegratedMagnetics/RJ-45Connectors
• CentralOceEquipment
• IndustrialEquipment
• IPCamera
Nominal Dimensions Functional Schematic
Low Capacitance RailClamp®
2-Line Surge and ESD Protection
for Ethernet Interfaces
Description
RClamp
®
0532TisahighperformanceTVSarraydesigned
toprotecttwodierentiallinesfromovervoltageevents
causedbyESD,lightning,CDE(CableDischargeEvents)
andEFT(electricalfasttransients).RClamp0532Tfea-
tureshighsurgecurrentcapabilityandmaybeusedto
protectEthernetinterfacesinMagJacks,communica-
tionsequipment,securitycameras,andindustrialequip-
ment.
RClamp0532Tintegrateslowcapacitance,surge-rated
steeringdiodeswithahighpowertransientvoltagesup-
pressor(TVS).TheTVSutilizessnap-backor“crow-bar”
technologytominimizedeviceclampingvoltageand
featureshighsurgecurrentcapabilityof10A(tp=8/20us).
ESDcharacteristicsarehighlightedbyhighESDwith-
standvoltage(+/-30kVperIEC61000-4-2)andextreme-
lylowdynamicresistance(0.020Ohmstypical).Each
devicewillprotecttwolinesoperatingat5volts.
RClamp0532Tisina6-pinSLP1610P4Tpackagemea-
suring1.6x1.0mmwitha���nominalheightof0.40mm.
Flow-throughpackagedesignsimpliesPCBlayoutand
maintainssignalintegrityonhigh-speedlines.
Thecombinationoflowclamping,highsurgecapability,
andinnovativepackagedesignenablesthisdeviceto
providethehighestleveloftransientprotection.
1.00
1.60
1 2
0.50
0.40
12
3, 4
RClamp0532T
Final Datasheet Rev 2.0
March 17, 2016
www.semtech.com
Page 2
Semtech
Absolute Maximum Ratings
Electrical Characteristics (T=25
O
C unless otherwise specied)
Rating Symbol Value Units
PeakPulsePower(tp=8/20µs) P
PK
100 W
PeakPulseCurrent(tp=8/20µs) I
PP
10 A
ESDperIEC61000-4-2(Contact)
(1)
ESDperIEC61000-4-2(Air)
(1)
V
ESD
±30
±30
kV
OperatingTemperature T
J
-40to+125
O
C
StorageTemperature T
STG
-55to+150
O
C
Parameter Symbol Conditions Min. Typ. Max. Units
ReverseStand-OVoltage V
RWM
-40
O
Cto125
O
C
Pin1orPin2toPins3and4
5 V
ReverseBreakdownVoltage V
BR
I
t
=10mA,
Pin1orPin2to
Pins3and4
-40
O
Cto125
O
C 6.5 9.5 11.5 V
HoldingCurrent I
H
Pin1orPin2toPins
3and4
T=25
O
C 75 150 250 mA
ReverseLeakageCurrent I
R
V
RWM
=5V
T=25
O
C 0.01 0.100 μA
T=125
O
C 0.03 0.250 μA
ClampingVoltage
(2)
V
C
I
PP
=10A,tp=1.2/50µs,
Pin1orPin2toPins3and4
6.5 10 V
ESDClampingVoltage
(3)
V
C
I
PP
=4A,tp=0.2/100ns(TLP)
Pin1orPin2toPins3and4
3.5 V
ESDClampingVoltage
(3)
V
C
I
PP
=16A,tp=0.2/100ns(TLP)
Pin1orPin2toPins3and4
3.75 V
DynamicResistance
(3),(4)
R
DYN
tp=0.2/100ns(TLP)
Pin1orPin2toPins3and4
0.020 Ohms
JunctionCapacitance C
J
V
R
=0V,f=1MHz
Pin1orPin2to
Pins3and4
T=25
O
C 1 1.2 pF
V
R
=0V,f=1MHz
Pin1toPin2
T=25
O
C 0.6 0.7 pF
Notes:
(1): ESD Gun return path to Ground Reference Plane (GRP)
(2): Measured using a 1.2/50us voltage, 8/20us current combination waveform, RS = 8 Ohms. Clamping is dened as the peak voltage
across the device after the device snaps back to a conducting state.
(3): Transmission Line Pulse Test (TLP) Settings: tp = 100ns, tr = 0.2ns, I
TLP
and V
TLP
averaging window: t
1
= 70ns to t
2
= 90ns.
(4): Dynamic resistance calculated from I
TLP
= 4A to I
TLP
= 16A