1
Subject to change without notice.
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C3D10170H–Silicon Carbide Schottky Diode
Z-Rec
RectifieR
Features
1700-Volt Schottky Rectier
Zero Reverse Recovery Current
Zero Forward Recovery Voltage
High-Frequency Operation
Temperature-Independent Switching Behavior
Extremely Fast Switching
Halogen-Free; RoHS Compliant
Benets
Replace Bipolar with Unipolar Rectiers
Essentially No Switching Losses
Higher Efciency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
Package
TO-247-2
Maximum Ratings
Symbol Parameter Value Unit Test Conditions Note
V
RRM
Repetitive Peak Reverse Voltage 1700 V
V
RSM
Surge Peak Reverse Voltage 1700 V
V
DC
DC Blocking Voltage 1700 V
I
F
Continuous Forward Current 14.4 A T
C
<135˚C
I
FRM
Repetitive Peak Forward Surge Current
45
26
A
T
C
=25˚C, t
P
=10 ms, Half Sine Wave, D=1
T
C
=110˚C, t
P
=10 ms, Half Sine Wave, D=1
I
FSM
Non-Repetitive Peak Forward Surge
Current
55
41
A
T
C
=25˚C, t
P
=10ms, Half Sine Wave, D=1
T
C
=110˚C, t
P
=10 ms, Half Sine Wave, D=1
P
tot
Power Dissipation
231
100
W
T
C
=25˚C
T
C
=110˚C
T
c
Maximum Case Temperature 135 ˚C
T
J
Operating Junction Range
-55 to
+175
˚C
T
stg
Storage Temperature Range
-55 to
+135
˚C
TO-247 Mounting Torque
1
8.8
Nm
lbf-in
M3 Screw
6-32 Screw
Part Number Package Marking
C3D10170H TO-247-2 C3D10170
V
RRM
= 1700 V
I
F;
T
C
<135˚C = 14.4 A
Q
c
= 96 nC
PIN 1
PIN 2
CASE
2 C3D10170H Rev. -
0
2
4
6
8
10
12
14
16
18
20
0 1 2 3 4 5 6 7
Electrical Characteristics
Symbol Parameter Typ. Max. Unit Test Conditions Note
V
F
Forward Voltage
1.7
3
2
3.5
V
I
F
= 10 A T
J
=25°C
I
F
= 10 A T
J
=175°C
I
R
Reverse Current
20
100
60
300
μA
V
R
= 1700 V T
J
=25°C
V
R
= 1700 V T
J
=175°C
Q
C
Total Capacitive Charge 96 nC
V
R
= 1700 V, I
F
= 10 A
di/dt = 200 A/μs
T
J
= 25°C
C Total Capacitance
827
78
41
pF
V
R
= 0 V, T
J
= 25°C, f = 1 MHz
V
R
= 200 V, T
J
= 25˚C, f = 1 MHz
V
R
= 800 V, T
J
= 25˚C, f = 1 MHz
Note:
1. This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol Parameter Typ. Unit
R
θJC
Thermal Resistance from Junction to Case 0.65 °C/W
Typical Performance
Figure 1. Forward Characteristics
0
1
2
3
4
5
0 250 500 750 1000 1250 1500 1750 2000 2250
Figure 2. Reverse Characteristics
I
F
(A)
V
F
(V)
I
R
(μA)
V
R
(V)
T
J
=-55°C
T
J
= 25°C
T
J
= 75°C
T
J
=125°C
T
J
=175°C
T
J
=-55°C
T
J
= 25°C
T
J
= 75°C
T
J
=125°C
T
J
=175°C